Administration de morphine epidurale par un dispositif totalement implante (Port-a-Cath). [Epidural administration of morphine by a completely implantable device (Port-a-Cath)]

The analgesia for patients suffering from incurable tumors is a major problem. The parenteral administration of opioids causes disagreable side effects. The development of completely implantable devices which permit the epidural administration of morphine offers higher quality analgesia with less side effects. Being easy to use, these devices allow cancer patients to remain at home, whereas otherwise they would need to be hospitalized for effective treatment of pain

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer positioned below an Al0.07Ga0.93N bottom cladding. Such devices are compared to standard InGaN based lasers looking at threshold current density, electrical characteristics, and far-field emission. Threshold current densities of 4 kA/cm(2) and slope efficiencies of similar to 0.6 W/A (for uncoated facets) have been achieved in AlInN containing devices. Lower mode leakage in the substrate is highlighted by a better transversal far-field pattern resulting in an improved beam quality. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489108

Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity

Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420 nm has been realized. Lasing at external cavity lengths of up to 50 mm is demonstrated, making integration of practical sized intracavity elements possible. Spectral and beam profile measurements indicate best operation conditions in a semiconfocal cavity configuration. Lasing threshold of 20.9 W is achieved for a 49 mm long cavity with output beam quality parameter M-2 not exceeding 1.1. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757758

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al0.83In0.17N/Al0.07Ga0.93N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density