The Student Voice

Editorial attacking James Silver\u27s reasons for promoting integration in Mississippi and at the University of Mississippi; Source: The Mississippianhttps://egrove.olemiss.edu/jws_clip/1003/thumbnail.jp

On the properties of compacton-anticompacton collisions

We study the properties of compacton-anticompacton collision processes. We compare and con- trast results for the case of compacton-anticompacton solutions of the K(l, p) Rosenau-Hyman (RH) equation for l = p = 2, with compacton-anticompacton solutions of the L(l,p) Cooper-Shepard- Sodano (CSS) equation for p = 1 and l = 3. This study is performed using a Pad\'e discretization of the RH and CSS equations. We find a significant difference in the behavior of compacton- anticompacton scattering. For the CSS equation, the scattering can be interpreted as "annihila- tion" as the wake left behind dissolves over time. In the RH equation, the numerical evidence is that multiple shocks form after the collision which eventually lead to "blowup" of the resulting waveform.Comment: 8 pages, 7 figure

Stability and dynamical properties of Rosenau-Hyman compactons using Pade approximants

We present a systematic approach for calculating higher-order derivatives of smooth functions on a uniform grid using Pad\'e approximants. We illustrate our findings by deriving higher-order approximations using traditional second-order finite-differences formulas as our starting point. We employ these schemes to study the stability and dynamical properties of K(2,2) Rosenau-Hyman (RH) compactons including the collision of two compactons and resultant shock formation. Our approach uses a differencing scheme involving only nearest and next-to-nearest neighbors on a uniform spatial grid. The partial differential equation for the compactons involves first, second and third partial derivatives in the spatial coordinate and we concentrate on four different fourth-order methods which differ in the possibility of increasing the degree of accuracy (or not) of one of the spatial derivatives to sixth order. A method designed to reduce roundoff errors was found to be the most accurate approximation in stability studies of single solitary waves, even though all derivates are accurate only to fourth order. Simulating compacton scattering requires the addition of fourth derivatives related to artificial viscosity. For those problems the different choices lead to different amounts of "spurious" radiation and we compare the virtues of the different choices.Comment: 12 figure

Spin 1 inversion: a Majorana tensor force for deuteron alpha scattering

We demonstrate, for the first time, successful S-matrix to potential inversion for spin one projectiles with non-diagonal $S^j_{ll'}$ yielding a $T_{\rm R}$ interaction. The method is a generalization of the iterative-perturbative, IP, method. We present a test case indicating the degree of uniqueness of the potential. The method is adapted, using established procedures, into direct observable to potential inversion, fitting $\sigma$, ${\rm i}T_{11}$, $T_{20}$, $T_{21}$ and $T_{22}$ for d + alpha scattering over a range of energies near 10 MeV. The $T_{\rm R}$ interaction which we find is very different from that proposed elsewhere, both real and imaginary parts being very different for odd and even parity channels.Comment: 7 pages Revtex, 4 ps figure

Temperature and field dependence of the intrinsic tunnelling structure in overdoped Bi2Sr2CaCu2 O8+δ

We report intrinsic tunneling data for mesa structures fabricated on three over- and optimally-doped Bi2.15Sr1.85CaCu2O8+δ crystals with transition temperatures of 86-78 K and 0.16-0.19 holes per CuO2 unit, for a wide range of temperature (T) and applied magnetic field (H), primarily focusing on one overdoped crystal (OD80). The differential conductance above the gap edge shows a clear dip structure which is highly suggestive of strong coupling to a narrow boson mode. Data below the gap edge suggest that tunnelling is weaker near the nodes of the d-wave gap and give clear evidence for strong T-dependent pair breaking. These findings could help theorists make a detailed Eliashberg analysis and thereby contribute towards understanding the pairing mechanism. We show that for our OD80 crystal the gap above Tc, although large, is reasonably consistent with the theory of superconducting fluctuations.The work at the University of Warwick is supported by EPSRC, UK, Grant No. EP/M028771/1 while that at Cambridge was supported by EPSRC, UK, Grant No. EP/C511778/1

Development, Demonstration, and Device Physics of FET-Accessed One-Transistor GaAs Dynamic Memory Technologies

The introduction of digital GaAs into modem high-speed computing systems has led to an increasing demand for high-density memory in these GaAs technologies. To date, most of the memory development efforts in GaAs have been directed toward four- and six-transistor static RAM\u27s, which consume substantial chip area and dissipate much static power resulting in limited single-chip GaAs storage capacities. As it has successfully done in silicon, a one-transistor dynamic RAM approach could alleviate these problems making higher density GaAs memories possible. This dissertation discusses theoretical and experimental work that presents the possibility for a high-speed, low-power, one-transistor dynamic RAM technology in GaAs. The two elements of the DRAM cell, namely the charge storage capacitor and the access field-effect transistor have been studied in detail. Isolated diode junction charge storage capacitors have demonstrated 30 minutes of storage time at room temperature with charge densities comparable to those obtained in planar silicon DRAM capacitors. GaAs JFET and MESFET technologies have been studied, and with careful device design and choice of proper operating voltages experimental results show that both can function as acceptable access transistors. One-transistor MESFET- and JFET-accessed DRAM cells have been fabricated and operated at room temperature and above with a standby power dissipation that is only a small fraction of the power dissipated by the best commercial GaAs static RAM cells. A 2 x 2 bit demonstration array was built and successfully operated at room temperature to demonstrate the addressable read/write capability of this new technology

Experiments in Interrupted Growth Molecular Beam Epitaxy Technology

From a device structure standpoint it would be advantageous to sandwich laterally defined features between layers of epitaxially grown material. In silicon this is commonly dope by growing the bottom layer, patterning the desired feature, and growing a second layer. Unfortunately, this process has not been practical in GaAs for the same reason that there is no true MOS technology in GaAs: The. GaAs surface is irreparably damaged when it is exposed to the atmosphere leading to the formation of undesirable interface states. Heterojunction FET\u27s are feasible only because high quality epilayers are grown during a single run in an ultrahigh vacuum environment. Standard growth methods allow for variation of doping and material content only in one direction, normal to the wafer surface. Varying the material in more than one dimension without the use of prohibitively exotic equipment requires removal of the wafer from the growth apparatus for lateral processing between material growths. Thus the problem that this thesis attempts to address: How to protect a GaAs surface during a lateral processing step and initiate regrowth leaving behind an electrically invisible restart interface. The potential applications of the development of a successful interrupted growth scheme for GaAs are numerous and far reaching. Specifically it would allow the fabrication of advantageous device geometries that are not possible under single material growth runs. Although this thesis deals exclusively with ion implanted interrupted growth by Molecular Beam Epitaxy, some of the concepts arid theories can be extended to other growth methods. It is both a review of previous work and a report of our attempts at Purdue to fabricate the first interrupted growth HIGFET\u27s and MISFET\u27s. Mechanisms behind the success and failure of GaAs interrupted growth are discussed and several experiments involving passivation materials and new interrupted growth schemes are propose

Automation and robotics considerations for a lunar base

An envisioned lunar outpost shares with other NASA missions many of the same criteria that have prompted the development of intelligent automation techniques with NASA. Because of increased radiation hazards, crew surface activities will probably be even more restricted than current extravehicular activity in low Earth orbit. Crew availability for routine and repetitive tasks will be at least as limited as that envisioned for the space station, particularly in the early phases of lunar development. Certain tasks are better suited to the untiring watchfulness of computers, such as the monitoring and diagnosis of multiple complex systems, and the perception and analysis of slowly developing faults in such systems. In addition, mounting costs and constrained budgets require that human resource requirements for ground control be minimized. This paper provides a glimpse of certain lunar base tasks as seen through the lens of automation and robotic (A&R) considerations. This can allow a more efficient focusing of research and development not only in A&R, but also in those technologies that will depend on A&R in the lunar environment

Deployable-erectable trade study for space station truss structures

The results of a trade study on truss structures for constructing the space station are presented. Although this study was conducted for the reference gravity gradient space station, the results are generally applicable to other configurations. The four truss approaches for constructing the space station considered in this paper were the 9 foot single fold deployable, the 15 foot erectable, the 10 foot double fold tetrahedral, and the 15 foot PACTRUSS. The primary rational for considering a 9 foot single-fold deployable truss (9 foot is the largest uncollapsed cross-section that will fit in the Shuttle cargo bay) is that of ease of initial on-orbit construction and preintegration of utility lines and subsystems. The primary rational for considering the 15 foot erectable truss is that the truss bay size will accommodate Shuttle size payloads and growth of the initial station in any dimension is a simple extension of the initial construction process. The primary rational for considering the double-fold 10 foot tetrahedral truss is that a relatively large amount of truss structure can be deployed from a single Shuttle flight to provide a large number of nodal attachments which present a pegboard for attaching a wide variety of payloads. The 15 foot double-fold PACTRUSS was developed to incorporate the best features of the erectable truss and the tetrahedral truss