Correlation of band formation and local vibrational mode structure in Ga(0.95)Al(0.05)As(1-x)N(x) with 0<= x <= 0.03

We present comprehensive optical studies of a series of as-grown and hydrogenated Ga(0.95)Al(0.05)As(1-x)N(x) epitaxial layers with various amounts x of substitutional nitrogen. Photomodulated and contactless electromodulated spectroscopies were performed to gain information about the influence of N incorporation on the band structure. The results are interpreted in terms of the band-anticrossing model and compared to corresponding GaAs:N data. The local vibrational properties of the N atoms studied by Raman and Fourier-transform infrared absorption were found to depend strongly on the Ga/Al nearest-neighbour configurations of N. Correlations between local N environments and global band structure properties are confirmed by comparing results obtained before and after hydrogenation of the samples

Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain

17nonenoneBISOGNIN G; DE SALVADOR D; DRIGO A.V; NAPOLITANI E; SAMBO A; BERTI M; POLIMENI A; FELICI M; CAPIZZI M; GUENGERICH M; KLAR P.J; BAIS G; JABEEN F; PICCIN M; RUBINI S; MARTELLI F; FRANCIOSI A.Bisognin, G; DE SALVADOR, D; DRIGO A., V; Napolitani, E; Sambo, A; Berti, M; Polimeni, A; Felici, M; Capizzi, M; Guengerich, M; KLAR P., J; Bais, G; Jabeen, F; Piccin, M; Rubini, S; Martelli, F; Franciosi, Alfons