Predicting radiated emissions from a cable harness through component level tests

“In this work, a procedure is developed to predict the radiated emissions from a cable harness using component-level tests. Direct measurement on the engine control unit is utilized to accurately characterize the equivalent common mode source voltages and impedance associated with the device. The cable harness geometry is reduced using the equivalent cable bundle approach by lumping wires according to the source and load impedance compared with characteristic impedance of the harness, which dramatically reduces the measurement effort and allows practical 3D full-wave simulation of the radiated emissions. Radiated emissions are predicted from an engine control unit (ECU) and an attached harness under a variety of harness configurations. The proposed procedure was validated through the comparisons of radiated emissions and measurements. Simulated emissions matched those from measurements within 6 dB across multiple cable configurations”--Abstract, page iv

Social and individual learning in the Minority Game

We study the roles of social and individual learning on outcomes of the Minority Game model of a financial market. Social learning occurs via agents adopting the strategies of their neighbours within a social network, while individual learning results in agents changing their strategies without input from other agents. In particular, we show how social learning can undermine efficiency of the market due to negative frequency dependent selection and loss of strategy diversity. The latter of which can lock the population into a maximally inefficient state. We show how individual learning can rescue a population engaged in social learning from such inefficiencies

Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology

Increasing the responsivity is one of the important issues for a photodetector. In this paper, we demonstrate an improved NMOSFET photodetector by using deep-n-well (DNW) structure which can improve the responsivity of the photodetector significantly. The experimental results show that the responsivity can be enhanced greatly by the DNW structure and is much larger than the previous work when DNW is biased with 0.5 V, while the dark current exhibits almost no increase. Further characterization indicates that the diode formed by the bulk and DNW can efficiently absorb photons and has a large gain factor of the photocurrent especially under low light condition, which gives a more promising application for the detector to detect the weak light

Emerging Artificial Two-Dimensional van der Waals Heterostructures for Optoelectronics

Two-dimensional (2D) materials are attracting explosive attention for their intriguing potential in versatile applications, covering optoelectronics, electronics, sensors, etc. An attractive merit of 2D materials is their viable van der Waals (VdW) stacking in artificial sequence, thus forming different atomic arrangements in vertical direction and enabling unprecedented tailoring of material properties and device application. In this chapter, we summarize the latest progress in assembling VdW heterostructures for optoelectronic applications by beginning with the basic pick-transfer method for assembling 2D materials and then discussing the different combination of 2D materials of semiconductor, conductor, and insulator properties for various optoelectronic devices, e.g., photodiode, phototransistors, optical memories, etc