3 research outputs found
Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT
Get PDFNegative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally.31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019), 19-23 May 2019, Shanghai, Chin
Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT
No full textNegative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally.31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019), 19-23 May 2019, Shanghai, Chin
