2,201 research outputs found
Potential Profiling of the Nanometer-Scale Charge Depletion Layer in n-ZnO/p-NiO Junction Using Photoemission Spectroscopy
We have performed a depth-profile analysis of an all-oxide p-n junction diode
n-ZnO/p-NiO using photoemission spectroscopy combined with Ar-ion sputtering.
Systematic core-level shifts were observed during the gradual removal of the
ZnO overlayer, and were interpreted using a simple model based on charge
conservation. Spatial profile of the potential around the interface was
deduced, including the charge-depletion width of 2.3 nm extending on the ZnO
side and the built-in potential of 0.54 eV
Magnetic Properties of Co-Fe-Ru Alloys in the f.c.c. and h.c.p. Phases(Physics)
Measurements have been made of the magnetization, the Fe^ Mossbauer effect, and the crystal structures of Co-rich Co-Fe-Ru alloys. The alloys with f.c.c. structure behave in a typical ferromagnetic way, while those with h.c.p. structure show non-saturation of the magnetization in magnetic fields as high as 80 kG, and they show relatively small magnetic moments per atom and a broad single Mossbauer absorption
Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells
near a polar surface of LaAlO3 (001). As the surface is brought in proximity to
the LaVO3 layer, an exponential drop in resistance and a decreasing positive
Seebeck coefficient is observed below a characteristic coupling length of 10-15
unit cells. We attribute this behavior to a crossover from an atomic
reconstruction of the AlO2-terminated LaAlO3 surface to an electronic
reconstruction of the vanadium valence. These results suggest a general
approach to tunable hole-doping in oxide thin film heterostructures.Comment: 16 pages, 7 figure
Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy
We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by
core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type"
interfaces, Ti3+ signals appeared, which were absent for insulating "p-type"
interfaces. The Ti3+ signals increased with LaAlO3 thickness, but started well
below the critical thickness of 4 unit cells for metallic transport. Core-level
shifts with LaAlO3 thickness were much smaller than predicted by the polar
catastrophe model. We attribute these observations to surface
defects/adsorbates providing charges to the interface even below the critical
thickness
Direct observation of the mass renormalization in SrVO by angle resolved photoemission spectroscopy
We have performed an angle-resolved photoemission study of the
three-dimensional perovskite-type SrVO. Observed spectral weight
distribution of the coherent part in the momentum space shows cylindrical Fermi
surfaces consisting of the V 3 orbitals as predicted by
local-density-approximation (LDA) band-structure calculation. The observed
energy dispersion shows a moderately enhanced effective mass compared to the
LDA results, corresponding to the effective mass enhancement seen in the
thermodynamic properties. Contributions from the bulk and surface electronic
structures to the observed spectra are discussed based on model calculations.Comment: 5 pages, 5 figure
Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3
(100)substrates by the pulsed laser deposition technique, and were studied by
measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band
region as a function of film thickness, both at room temperature and low
temperature. Our results demonstrated an abrupt variation in the spectral
structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers)
Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for
phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to
the intrinsic size effects.Comment: 13 pages, 4 figure
Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in LaSrMnO
We report the first observation of changes in the electronic structure of
LaSrMnO (LSMO) across the filling-control metal-insulator
(MI) transition by means of in situ angle-resolved photoemission spectroscopy
(ARPES) of epitaxial thin films. The Fermi surface gradually disappears near
the MI transition by transferring the spectral weight from the coherent band
near the Fermi level () to the lower Hubbard band, whereas a pseudogap
behavior also exists in the ARPES spectra in the close vicinity of for
the metallic LSMO. These results indicate that the spectral weight transfer
derived from strong electron-electron interaction dominates the gap formation
in LSMO associated with the filling-control MI transition.Comment: 11 pages, 4 figure
In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations
We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3
(PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of
epitaxial strain on the electronic structure. We found that the chemical
potential shifted monotonically with doping, unlike bulk PCMO, implying the
disappearance of incommensurate charge fluctuations of bulk PCMO. In the
valence-band spectra, we found a doping-induced energy shift toward the Fermi
level (E_F) but there was no spectral weight transfer, which was observed in
bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions
determined by angle-resolved photoemission spectroscopy and could not be
explained by the metallic band structure of the C-type antiferromagnetic state,
probably due to localization of electrons along the ferromagnetic chain
direction or due to another type of spin-orbital ordering.Comment: 5 pages, 4 figure
- …