Evolution of the electronic structure across the filling-control and bandwidth-control metal-insulator transitions in pyrochlore-type Ru oxides

We have performed photoemission and soft x-ray absorption studies of pyrochlore-type Ru oxides, namely, the filling-control system Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ and the bandwidth-control system Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$, which show insulator-to-metal transition with increasing Ca and Bi concentration, respectively. Core levels and the O 2$p$ valence band in Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ show almost the same amount of monotonous upward energy shifts with Ca concentration, which indicates that the chemical potential is shifted downward due to hole doping. The Ru 4$d$ band in Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ is also shifted toward the Fermi level ($E_F$) with hole doping and the density of states (DOS) at $E_F$ increases. The core levels in Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$, on the other hand, do not show clear energy shifts except for the Ru 3$d$ core level, whose line shape change also reflects the increase of metallic screening with Bi concentration. We observe pronounced spectral weight transfer from the incoherent to the coherent parts of the Ru 4d $t_{2g}$ band with Bi concentration, which is expected for a bandwidth-control Mott-Hubbard system. The increase of the DOS at $E_F$ is more abrupt in the bandwidth-control Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$ than in the filling-control Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$, in accordance with a recent theoretical prediction. Effects of charge transfer between the Bi 6$sp$ band and the Ru 4$d$ band are also discussed.Comment: 11 pages, 6 figure

Chemical potential shift in La(1-x)Sr(x)MnO(3): Photoemission test of the phase separation scenario

We have studied the chemical potential shift in La(1-x)Sr(x)MnO(3) as a function of doped hole concentration by core-level x-ray photoemission. The shift is monotonous, which means that there is no electronic phase separation on a macroscopic scale, whereas it is consistent with the nano-meter scale cluster formation induced by chemical disorder. Comparison of the observed shift with the shift deduced from the electronic specific heat indicates that hole doping in La(1-x)Sr(x)MnO(3) is well described by the rigid-band picture. In particular no mass enhancement toward the metal-insulator boundary was implied by the chemical potential shift, consistent with the electronic specific heat data.Comment: 7 pages, 3 figures, to be published in Europhysics Letter

On the origin of magnetoresistance in Sr2_2FeMoO6_6

We report detailed magnetization ($M$) and magnetoresistance ($MR$) studies on a series of Sr$_2$FeMoO$_6$ samples with independent control on anti-site defect and grain boundary densities. These results, exhibiting a switching-like behavior of $MR$ with $M$, establish that the $MR$ is controlled by the magnetic polarization of grain boundary regions, rather than of the grains within a resonant tunnelling mechanism.Comment: 4 pages, 4 figure

Orbital ordering in La0.5_{0.5}Sr1.5_{1.5}MnO4_4 studied by model Hartree-Fock calculation

We have investigated orbital ordering in the half-doped manganite La$_{0.5}$Sr$_{1.5}$MnO$_4$, which displays spin, charge and orbital ordering, by means of unrestricted Hartree-Fock calculations on the multiband $p$-$d$ model. From recent experiment, it has become clear that La$_{0.5}$Sr$_{1.5}$MnO$_4$ exhibits a cross-type $(z^2-x^2/y^2-z^2)$ orbital ordering rather than the widely believed rod-type $(3x^2-r^2/3y^2-r^2)$ orbital ordering. The calculation reveals that cross-type $(z^2-x^2/y^2-z^2)$ orbital ordering results from an effect of in-plane distortion as well as from the relatively long out-of-plane Mn-O distance. For the "Mn$^{4+}$" site, it is shown that the elongation along the c-axis of the MnO$_6$ octahedra leads to an anisotropic charge distribution rather than the isotropic one.Comment: 4 pages, 5 figure

Potential Profiling of the Nanometer-Scale Charge Depletion Layer in n-ZnO/p-NiO Junction Using Photoemission Spectroscopy

We have performed a depth-profile analysis of an all-oxide p-n junction diode n-ZnO/p-NiO using photoemission spectroscopy combined with Ar-ion sputtering. Systematic core-level shifts were observed during the gradual removal of the ZnO overlayer, and were interpreted using a simple model based on charge conservation. Spatial profile of the potential around the interface was deduced, including the charge-depletion width of 2.3 nm extending on the ZnO side and the built-in potential of 0.54 eV

Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity

We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.Comment: 16 pages, 7 figure

Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy

We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type" interfaces, Ti3+ signals appeared, which were absent for insulating "p-type" interfaces. The Ti3+ signals increased with LaAlO3 thickness, but started well below the critical thickness of 4 unit cells for metallic transport. Core-level shifts with LaAlO3 thickness were much smaller than predicted by the polar catastrophe model. We attribute these observations to surface defects/adsorbates providing charges to the interface even below the critical thickness