Evolution of the electronic structure across the filling-control and bandwidth-control metal-insulator transitions in pyrochlore-type Ru oxides

We have performed photoemission and soft x-ray absorption studies of pyrochlore-type Ru oxides, namely, the filling-control system Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ and the bandwidth-control system Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$, which show insulator-to-metal transition with increasing Ca and Bi concentration, respectively. Core levels and the O 2$p$ valence band in Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ show almost the same amount of monotonous upward energy shifts with Ca concentration, which indicates that the chemical potential is shifted downward due to hole doping. The Ru 4$d$ band in Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ is also shifted toward the Fermi level ($E_F$) with hole doping and the density of states (DOS) at $E_F$ increases. The core levels in Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$, on the other hand, do not show clear energy shifts except for the Ru 3$d$ core level, whose line shape change also reflects the increase of metallic screening with Bi concentration. We observe pronounced spectral weight transfer from the incoherent to the coherent parts of the Ru 4d $t_{2g}$ band with Bi concentration, which is expected for a bandwidth-control Mott-Hubbard system. The increase of the DOS at $E_F$ is more abrupt in the bandwidth-control Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$ than in the filling-control Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$, in accordance with a recent theoretical prediction. Effects of charge transfer between the Bi 6$sp$ band and the Ru 4$d$ band are also discussed.Comment: 11 pages, 6 figure

Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy

Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.Comment: 13 pages, 4 figure

Soft x-ray magnetic circular dichroism study of weakly ferromagnetic Zn1−x_{1-x}Vx_xO thin film

We performed a soft x-ray magnetic circular dichroism (XMCD) study of a Zn$_{1-x}$V$_x$O thin film which showed small ferromagnetic moment. Field and temperature dependences of V 2$p$ XMCD signals indicated the coexistence of Curie-Weiss paramagnetic, antiferromagnetic, and possibly ferromagnetic V ions, quantitatively consistent with the magnetization measurements. We attribute the paramagnetic signal to V ions substituting Zn sites which are somewhat elongated along the c-axis

Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)3_{3}O4_{4} thin films exhibiting photo-induced magnetization

By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.Comment: 4 pages, 4 figure

Spectral functions for strongly correlated 5f-electrons

We calculate the spectral functions of model systems describing 5f-compounds adopting Cluster Perturbation Theory. The method allows for an accurate treatment of the short-range correlations. The calculated excitation spectra exhibit coherent 5f bands coexisting with features associated with local intra-atomic transitions. The findings provide a microscopic basis for partial localization. Results are presented for linear chains.Comment: 10 Page

Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, $La_{1-x}Ca_xVO_3$ with $x$ = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, $U/W$, is shown to describe consistently the spectral evolution.Comment: Revtex, 4 pages, 3 postscript figures. To appear in Phys. Rev. Let