1,441 research outputs found
Proposal for a Topological Plasmon Spin Rectifier
We propose a device in which the spin-polarized AC plasmon mode in the
surface state of a topological insulator nanostructure induces a static spin
accumulation in a resonant, normal metal structure coupled to it. Using a
finite-difference time-domain model, we simulate this spin-pump mechanism with
drift, diffusion, relaxation, and precession in a magnetic field. This
optically-driven system can serve as a DC "spin battery" for spintronic
devices.Comment: Eq. 1 corrected; Figs 3 and 4 update
Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy
At submonolayer coverage, Mn forms atomic wires on the Si(001) surface
oriented perpendicular to the underlying Si dimer rows. While many other
elements form symmetric dimer wires at room temperature, we show that Mn wires
have an asymmetric appearance and pin the Si dimers nearby. We find that an
atomic configuration with a Mn trimer unit cell can explain these observations
due to the interplay between the Si dimer buckling phase near the wire and the
orientation of the Mn trimer. We study the resulting four wire configurations
in detail using high-resolution scanning tunneling microscopy (STM) imaging and
compare our findings with STM images simulated by density functional theory.Comment: 4 pages, 4 figure
Multiple layer local oxidation for fabricating semiconductor nanostructures
Coupled semiconductor nanostructures with a high degree of tunability are
fabricated using local oxidation with a scanning force microscope. Direct
oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a
shallow two-dimensional electron gas is combined with the local oxidation of a
thin titanium film evaporated on top. A four-terminal quantum dot and a double
quantum dot system with integrated charge readout are realized. The structures
are tunable via in-plane gates formed by isolated regions in the electron gas
and by mutually isolated regions of the Ti film acting as top gates. Coulomb
blockade experiments demonstrate the high quality of this fabrication process.Comment: 3 pages, 3 figure
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