35 research outputs found

    Effect of hydrogen on ground state structures of small silicon clusters

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    We present results for ground state structures of small Sin_{n}H (2 \leq \emph{n} \leq 10) clusters using the Car-Parrinello molecular dynamics. In particular, we focus on how the addition of a hydrogen atom affects the ground state geometry, total energy and the first excited electronic level gap of an Sin_{n} cluster. We discuss the nature of bonding of hydrogen in these clusters. We find that hydrogen bonds with two silicon atoms only in Si2_{2}H, Si3_{3}H and Si5_{5}H clusters, while in other clusters (i.e. Si4_{4}H, Si6_{6}H, Si7_{7}H, Si8_{8}H, Si9_{9}H and Si10_{10}H) hydrogen is bonded to only one silicon atom. Also in the case of a compact and closed silicon cluster hydrogen bonds to the cluster from outside. We find that the first excited electronic level gap of Sin_{n} and Sin_{n}H fluctuates as a function of size and this may provide a first principles basis for the short-range potential fluctuations in hydrogenated amorphous silicon. Our results show that the addition of a single hydrogen can cause large changes in the electronic structure of a silicon cluster, though the geometry is not much affected. Our calculation of the lowest energy fragmentation products of Sin_{n}H clusters shows that hydrogen is easily removed from Sin_{n}H clusters.Comment: one latex file named script.tex including table and figure caption. Six postscript figure files. figure_1a.ps and figure_1b.ps are files representing Fig. 1 in the main tex

    Energy Levels and Electric Dipole Transitions for Neutral Actinium (Z=89)

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    We have reported a relativistic multiconfiguration Dirac-Fock calculation including Breit and quantum electrodynamic contributions on the level structure of atomic actinium, Ac I (Z = 89). The computations have been carried out for the low 45 even and 60 odd-parity levels, and the electric dipole transition parameters (wavelengths, oscillator strengths and transition probabilities) for some transitions between these levels. Comparison has been also made with other results in available literature
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