Current limiting cathodes for non transit-time limited operation of InP TED's in the 100 GHz window.

Reverse-biased low-barrier Schottky contact and reverse-biased isotype GaInAsP/InP heterojunction, used as current limiting cathodes for InP TED's, are investigated on the basis of output power and efficiency improvement as compared to N+NN+ devices

Simulation globale du fonctionnement à 94 GHz d'un oscillateur ATT pulsé, basée sur le couplage de modèles physique, électrique, thermique et électromagnétique

International audienc

Influence of the operating temperature on the design and utilization of 94 GHz pulsed silicon IMPATT diodes

International audienceThe RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have a limited optimum temperature range of operation, associated to specific matching and bias conditions, to achieve a stable and high power operation. This restriction necessitates a thermal control when the oscillator must operate over a wide ambient temperature range. Highly doped, short active zone length diodes appear to have the best potential for high power performance

GaAs monolithic transferred-electron devices for millimeter waves applications

The authors point out the existence of two different operating modes in a planar GaAs transferred-electron oscillator with a current limiting MESFET cathode. The respective advantages and drawbacks of these two modes are discussed on the basis of further monolithic integration. The influence of the operating conditions on the RF performance are given in the 100 GHz window

GaAs monolithic transferred-electron devices for millimeter waves applications

The authors point out the existence of two different operating modes in a planar GaAs transferred-electron oscillator with a current limiting MESFET cathode. The respective advantages and drawbacks of these two modes are discussed on the basis of further monolithic integration. The influence of the operating conditions on the RF performance are given in the 100 GHz window