Grundlagenuntersuchungen zu lasergestuetzten Nanolichtquellen fuer Life Science. Teilprojekt: Laser- und elektronenstrahlangeregte Nanolichtquellen fuer die optische Nahfeldspektroskopie an biologischen Objekten Abschlussbericht

SIGLEAvailable from TIB Hannover: F03B1100 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Untersuchung zum Entwurf von Mikrosystemen. Teilvorhaben: Untersuchung zur Integration von technischen und biologische Komponenten in Mikrosystemen Schlussbericht

Available from TIB Hannover: DtF QN1(24,16) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Integrierbarer multimodaler Empfaenger fuer mobile Kommunikation. Teilvorhaben: HF optimierte mehrlagige Verdrahtung in Hybrid MCM Abschlussbericht

The planar integration concept for the realization of complex systems developed by the Fraunhofer Institute-IZM and -ISiT has been examined and optimized in terms of high frequency application for mobile communication systems. A special module with active and passive components was designed and realized for application in the frequency range of 2 GHz to 15 GHz. A thinfilm multilayer process was modified in terms of material selection and process parameters to meet the requirements of good signal transmission properties. Special test structures (such as vias and meander) which were integrated in the module were used to characterize the thinfilm process. The signal transmission properties were investigated in the frequency range up to 15 GHz. Furthermore the influence of process steps was investigated on the functionality of active CMOS-ICs. The final result are: - The planar integration concept is suited to realize multichip modules in the frequency range higher then 2 GHz. - The results in terms of technological parameters and design rules were used for the design of a DECT DCR receiver. - Each part of processing the modules in reference to the testchips inspected by ISiT has caused no problems on principle. The checked IC parameters are within the supposed limits after different process steps during the hole integration process. (orig.)SIGLEAvailable from TIB Hannover: F98B614+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

PROMETHEUS phase 2: integrated Si-sensors for automative application Technical final report

The realization of prototypes of a monolithically integrated low pressure sensor could not be performed during the project duration due to unexpected technological problems. Process modifications have been successfully tested for an advanced fabrication process. Discrete devices have been fabricated and a variety of test procedures have been performed. These test measurements show that although some modifications are necessary for an optimized sensor, the developed process is suitable for the realization of monolithically integrated low pressure sensorsSIGLEAvailable from TIB Hannover: D.Dt.F. QN1(6,60) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBosch (R.) GmbH, Reutlingen (Germany); Bundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Deep UV image processing for 0.35 micron lithography in production JESSI subprogramme equipment and materials technology

For deep UV image processing in lithography for chip production a stable resist process was developed based on the SUCCESS resist concept of the joint European project 'JESSI E 162'. Starting from poly(p-hydroxystyrene) the formulation of delay-stable positive photoresists with good resolution capabilities and dry-etch resistance was obtained by applying additives against T-topping and by adjusting the protective group chemistry for linewidth stability. The major achievements are: linewidth stability for #>=# 0.35 #mu#m lines during delay times up to 120 min between exposure and post-exposure bake, 0.24 #mu#m lines stable for 30 min, linearity down to 0.35 #mu#m, resolution of 0.22 #mu#m with phase-shift mask, dry etch resistance better than conventional novolac resists. Chemically amplified resists have been modelled using the effective acid concept. (WEN)Available from TIB Hannover: F96B272+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Entwicklung von Mikrostrukturierungstechniken fuer HTSL Abschlussbericht

The objective of the research was the development of a dry etching technique for the pattern transfer of the high temperature superconductor Yttrium-Barium-Copper-Oxide in the run-up of an industrial application. Stable etchmasks with #mu#m-dimensions, which are used for the pattern transfer into the HTSC, are fabricated via UV-lithography and single layer resists with high throughput. Using electron beam-lithography in combination with multilayer technique resist patterns down to 100 nm lateral dimensions on HTSC-substrates have been obtained. For the pattern generation in YBa_2Cu_3O_7_-_x-thin films with up to 400 nm thickness argon ion beam etching was characterized and optimized concerning the device-oriented application. A liquid nitrogen cooled sample stage has been constructed which allows rotation and tilt while processing in the ion beam etching equipment. Critical current densities of 10"7 A/cm"2 were measured at microbridges down to 0.3 #mu#m width. However, a strong decrease of current density was observed after several months, especially for structures with lateral dimensions below 5 #mu#m. On 2'' LaAlO_3-substrates RF-delay lines in a full wafer layout with coplanar threeband lead were fabricated and characterized. Delay times of nearly 18 ns with good high frequency behaviour have been realized. (orig.)SIGLEAvailable from TIB Hannover: F95B2181+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Entwicklung eines mit der Siliziumtechnologie hergestellten pneumatischen 3/2-Wege-Mikroventils Abschlussbericht

SIGLEAvailable from TIB Hannover: F04B842 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Weiterentwicklung des Roentgensteppers Abschlussbericht

Various components of the Karl Suss XRS200 X-ray stepper have been improved and field-tested towards their application in fabrication of ULSI devices. For this purpose, test wafers (4'' to 8'' in diameter) and X-ray masks have been prepared. An alternative exposure concept has been tested, where the radiation beam sweeps over the exposure field by means of an oscillating mirror and a moving beamline window. This concept enables shorter exposure times. The alignment accuracy has been improved by implementing new alignment patterns and an adapted evaluation software. This alignment pattern design was especially advantageous with mask/wafer gap values less than 50 microns. Theoretical investigations disclosed the influence of wafer-topography and resist coverage of the alignment marks on the alignment result. Experiments and Finite-Element-Modelling calculations (FEM) have been performed to break down the contribution of particles between wafer and wafer chuck on the overlay result. It has been shown that by an intentional distortion of the mask holder, the effect of process-induced distortions of the wafer onto the alignment may be reduced. FEM calculations have been made and have been experimentally confirmed. Various optical and capacitive sensor sytems have been tested for their usefulness in performing an accurate and stable wedge correction of mask and wafer. (orig.)SIGLEAvailable from TIB Hannover: F95B1295+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Multiprocessing modules based upon advanced plasma sorces (ECR) Final report

The research project aimed at the development of a plasma etching module for 200 mm wafers for the application in cluster systems fulfilling the MESC standard. Additionallly the development of poly silicon etch process for 64 MBit memories was aimed at. Using a Leybold ECR source first investigations, supported by appropriate diagnostics, were performed in order to improve uniformity. Results hereof had direct impact on the construction of the new high density plasma source, including a confinement with permanent magnets, improvement of microwave coupling, reconstruction of the microwave horn and quartz cylinder. By doing so, the uniformity for the poly silicon etch process could be improved to 5% (3#sigma#). Applying well known diagnostics (QMS, LP, OES) for the plasma and source characterisation resulted in a fast transer of the etch process from the test system to the AST prototype module. A compact EROES system was constructed, tested and finally applied for the in-situ determination of etch rates as well as for end point detection in the multi step poly silicon etch process. (orig.)SIGLEAvailable from TIB Hannover: F95B2466+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Optimierte Integration fuer Hochfrequenzsysteme Abschlussbericht

Available from TIB Hannover: F00B1165 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany); DLR Deutsches Zentrum fuer Luft- und Raumfahrt e.V., Bonn (Germany)DEGerman