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    3 research outputs found

    Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors

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    'IOP Publishing'
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    Influence of doping level and surface states in tunneling spectroscopy of an I n 0.53 G a 0.47 As quantum well grown on p -type doped InP(001)

    Author
    Publication venue
    American Physical Society
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    No full text
    International audienc

    Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors

    Author
    Publication venue
    'IOP Publishing'
    Publication date
    Field of study
    No full text
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