Improved Thermophotovoltaic (TPV) Performance Using Dielectric Photon Concentrations (DPC)

This report presents theoretical and experimental results, which demonstrate the feasibility of a new class of thermophotovoltaic (TPV) energy converters with greatly improved power density and efficiency. Performance improvements are based on the utilization of the enhanced photon concentrations within high refractive index materials. Analysis demonstrates that the maximum achievable photon flux for TPV applications is limited by the lowest index in the photonic cavity, and scales as the minimum refraction index squared, n{sup 2}. Utilization of the increased photon levels within high index materials greatly expands the design space limits of TPV systems, including: a 10x increase in power density, a 50% fractional increase in conversion efficiency, or alternatively reduced radiator temperature requirements to as low as {approx} 1000 F

An x-ray diffraction study of microstructural deformation induced by cyclic loading of selected steels

X-ray double crystal diffractometry (XRDCD) was used to assess cyclic microstructural deformation in a face centered cubic (fcc) steel (AISI304) and a body centered cubic (bcc) steel (SA508 class 2). The first objective of the investigation was to determine if XRDCD could be used to effectively monitor cyclic microstructural deformation in polycrystalline Fe alloys. A second objective was to study the microstructural deformation induced by cyclic loading of polycrystalline Fe alloys. The approach used in the investigation was to induce fatigue damage in a material and to characterize the resulting microstructural deformation at discrete fractions of the fatigue life of the material. Also, characterization of microstructural deformation was carried out to identify differences in the accumulation of damage from the surface to the bulk, focusing on the following three regions: near surface (0--10 {micro}m), subsurface (10--300 {micro}m), and bulk. Characterization of the subsurface region was performed only on the AISI304 material because of the limited availability of the SA508 material. The results from the XRDCD data indicate a measurable change induced by fatigue from the initial state to subsequent states of both the AISI304 and the SA508 materials. Therefore, the XRDCD technique was shown to be sensitive to the microstructural deformation caused by fatigue in steels; thus, the technique can be used to monitor fatigue damage in steels. In addition, for the AISI304 material, the level of cyclic microstructural deformation in the bulk material was found to be greater than the level in the near surface material. In contrast, previous investigations have shown that the deformation is greater in the near surface than the bulk for Al alloys and bcc Fe alloys

Optical Coatings for Thermophotovoltaic Spectral Control

The efficiency of thermophotovoltaic (TPV) energy conversion is dependent on efficient spectral control. An edge pass filter (short pass) in series with a highly doped, epitaxially grown layer has achieved the highest performance of TPV spectral control. Front surface, tandem filters have achieved the highest spectral efficiency and represent the best prospect for even higher spectral efficiency for TPV energy conversion systems. Specifically, improvements in the physical vapor deposition process, identification of other materials with a high index of refraction and a low absorption coefficient, and more efficient edge filter designs could provide higher TPV spectral performance

Front Surface Spectral Control Development for TPV Energy Conversion (a Presentation)

This paper discusses the introduction to the potential of alternative materials that provide higher temperature stability than current materials. The outline of this report is: (1) Review briefly the importance of spectral control; (2) Provide current results; (3) Introduce the temperature stability issue; (4) Describe the requirements for alternate materials and (5) Present alternative materials. The conclusions of this report are: (1) Antimony selenide has achieved the highest spectral efficiency to date; (2) Several materials expected to have higher temperature stability have been shown to be viable; (3) So far, with limited development, the performance of the these materials is lower than Antimony selenide; and (4) Additional development will be required to achieve similar or higher performance

System Performance Projections for TPV Energy Conversion

TPV technology has advanced rapidly in the last five years, with diode conversion efficiency approaching >30%, and filter efficiency of {approx}80%. These achievements have enabled repeatable testing of 20% efficient small systems, demonstrating the potential of TPV energy conversion. Near term technology gains support a 25% efficient technology demonstration in the two year timeframe. However, testing of full size systems, which includes efficiency degradation mechanisms, such as: nonuniform diode illumination, diode and filter variability, temperature non-uniformities, conduction/convection losses, and lifetime reliability processes needs to be performed. A preliminary analysis of these differential effects has been completed, and indicates a near term integrated system efficiency of {approx}15% is possible using current technology, with long term growth to 18-20%. This report addresses the system performance issues

The Status of Thermophotovoltaic Energy Conversion Technology at Lockheed Martin Corporation

In a thermophotovoltaic (TPV) energy conversion system, a heated surface radiates in the mid-infrared range onto photocells which are sensitive at these energies. Part of the absorbed energy is converted into electric output. Conversion efficiency is maximized by reducing the absorption of non-convertible energy with some form of spectral control. In a TPV system, many technology options exist. Our development efforts have concentrated on flat-plate geometries with greybody radiators, front surface tandem filters and a multi-chip module (MCM) approach that allows selective fabrication processes to match cell performance. Recently, we discontinued development of GaInAsSb quaternary cell semiconductor material in favor of ternary GaInAs material. In our last publication (Ref. 1), the authors reported conversion efficiencies of about 20% (radiator 950 C, cells 22 C) for small modules (1-4 cm{sup 2}) tested in a prototypic cavity test environment. Recently, we have achieved measured conversion efficiencies of about 12.5% in larger ({approx}100 cm{sup 2}) test arrays. The efficiency reduction in the larger arrays was probably due to quality and variation of the cells as well as non-uniform illumination from the hot radiator to the cold plate. Modules in these tests used GaInAsSb cells with 0.52 eV bandgap and front surface filters for spectral control. This paper provides details of the individual system components and the rationale for our technical decisions. It also describes the measurement techniques used to record these efficiencies

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures

Simulation of practical single-pixel wire-grid polarizers for superpixel stokes vector imaging arrays Optical Engineering

Abstract. An optical tracking sensor that produces images containing the state of polarization of each pixel can be implemented using individual wire-grid micropolarizers on each detector element of a solid-state focal plane array. These sensors can significantly improve identification and tracking of various man-made targets in cluttered, dynamic scenes such as urban and suburban environments. We present electromagnetic simulation results for wire-grid polarizers that can be fabricated on standard imaging arrays at three different technology nodes (an 80-, 250-, and 500-nm pitch) for use in polarization-sensitive detector arrays. The degradation in polarizer performance with the larger pitch grids is quantified. We also present results suggesting the performance degradation is not significant enough to affect performance in a man-made vehicle-tracking application