Optical and THz Galois diffusers

Binary surface reliefs with sub-wavelength features making up a pseudorandom pattern based on mathematical Galois fields GF(p^m) [1, 2] can scatter incoming waves into a large number of diffraction maxima within a huge solid angle. A one-dimensional (1D) Galois number sequence can be folded into a two-dimensional (2D) array by the sino-representation [2]. This concept was been verified for acoustic waves a long time ago [3, 4] and is investigated here for visible light and THz waves. Our Galois diffusers are designed as reflection reliefs and realised by electron beam lithography for the optical regime and UV photolithography for the THz regime. Our results show that optical and THz Galois surfaces are excellent diffusers for electromagnetic waves; they distribute the reflected intensity evenly over a large number of maxima nearly within the entire half solid angle in the backward direction

Is keV ion induced pattern formation on Si(001) caused by metal impurities?

We present ion beam erosion experiments performed in ultra high vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles below 45 degrees with respect to the global surface normal using 2 keV Kr ions and fluences of 2 x 10^22 ions/m^2. In fact, the ion beam induces a smoothening of preformed patterns. Simultaneous sputter deposition of stainless steel in this angular range creates a variety of patterns, similar to those previously ascribed to clean ion beam induced destabilization of the surface profile. Only for grazing incidence with incident angles between 60 degrees and 83 degrees pronounced ion beam patterns form. It appears that the angular dependent stability of Si(001) against pattern formation under clean ion beam erosion conditions is related to the angular dependence of the sputtering yield, and not primarily to a curvature dependent yield as invoked frequently in continuum theory models.Comment: 15 pages, 7 figures. This is an author-created, un-copyedited version of an article published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from i

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 × 1010 cm−2 and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between λ = 0.876 and 1.035 μm, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K

Mikro- und integriert-optische fs/ps-Pulsformer Abschlussbericht

SIGLEAvailable from TIB Hannover: F00B1209+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekStiftung Volkswagenwerk, Hannover (Germany)DEGerman

ARROW-Strukturen fuer echte Phasenanpassung bei Frequenzverdopplung (SHG)

Available from TIB Hannover: F00B1575+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEVolkswagen Stiftung, Hannover (Germany)DEGerman

ARROW-Strukturen fuer echte Phasenanpassung bei Frequenzverdopplung (SHG) Jahresbericht fuer den Zeitraum 1.9.2000-31.8.2001

SIGLEAvailable from TIB Hannover: F02B324 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekVolkswagen Stiftung, Hannover (Germany)DEGerman

1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years.There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only

1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years.There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only