Synthesis of mesoporous amorphous silica by Kr and Xe ion implantation: Transmission electron microscopy study of induced nanostructures

Thermally grown amorphous SiO2 was implanted at room temperature with heavy noble gases Kr and Xe in order to create cavities in the oxide and increase its porosity. The implantation energies were chosen in order to have the same implantation depth for both ions. Although both ions induce bubbles in amorphous SiO2, bubble size and spatial distribution depend upon the ion mass. Moreover, Xe implantation leads to the additional formation of "nanoclusters". Thermal stability of bubbles/cavities depends on the implanted ion. The nucleation of bubbles and nanoclusters in amorphous SiO2 is discussed in terms of ion mobility, gas-defect interactions, and chemical interaction. Bubble growth is shown to occur by a migration and coalescence process