Joule-assisted silicidation for short-channel silicon nanowire devices

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.Comment: 6 pages, 4 figure

The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon

Shallow Indium implants and Indium-Carbon co-implants have been subjected to flash anneals and a combination of furnace treatments in order to evaluate the electrical properties of the implant and differentiate the behavior between low temperature and high temperature ultra fast thermal treatments, It is found that by using "flash" anneals, higher levels of electrical activation are achievable for the given experimental conditions, This behavior is related to the indium dose and to the dopant diffusion within the layer and its interaction with the carbon. © 2006 American Institute of Physics

The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon

Shallow Indium implants and Indium-Carbon co-implants have been subjected to flash anneals and a combination of furnace treatments in order to evaluate the electrical properties of the implant and differentiate the behavior between low temperature and high temperature ultra fast thermal treatments, It is found that by using "flash" anneals, higher levels of electrical activation are achievable for the given experimental conditions, This behavior is related to the indium dose and to the dopant diffusion within the layer and its interaction with the carbon. © 2006 American Institute of Physics

Nonconventional flash annealing on shallow indium implants in silicon

The diffusion behavior and the electrical characteristics of indium doped layers in silicon were studied. Indium was implanted in silicon at energies of 70 and 25 keV to doses of 5.8 and 3E14, respectively. The implants were performed both in amorphous and crystalline silicon. The implants were submitted to a combination of thermal annealing, RTA, and flash annealing to regrow the implanted layers and activate the dopant. Four point probe sheet resistance measurements and Hall effect measurements were carried out to test the electrical properties of the implanted layers. The atomic concentration profiles were assessed using secondary ion mass spectrometry. A drastic increase in the dopant activation was observed following co-implanting with carbon. Moreover, the carbon presence inhibits the indium diffusion and segregation in damaged areas. The preamorphizing treatment affects the indium diffusion in two ways. For low thermal budget anneals the diffusion is suppressed, conversely the diffusion is enhanced under severe annealing conditions

Control of Interfacial Layers for High-Performance Porous Si Lithium-Ion Battery Anode

We demonstrate a facile synthesis of micrometer-sized porous Si particles via copper-assisted chemical etching process. Subsequently, metal and/or metal silicide layers are introduced on the surface of porous Si particles using a simple chemical reduction process. Macroporous Si and metal/metal silicide-coated Si electrodes exhibit a high initial Coulombic efficiency of similar to 90%. Reversible capacity of carbon-coated porous Si gradually decays after 80 cycles, while metal/metal silicide-coated porous Si electrodes show significantly improved cycling performance even after 100 cycles with a reversible capacity of >1500 mAh g(-1). We confirm that a stable solid-electrolyte interface layer is formed on metal/metal silicide-coated porous Si electrodes during cycling, leading to a highly stable cycling performance.close2