Nuclear lifetime of states in ⁹⁴Tc and ⁹⁶Tc via the pulsed-beam, direct-timing technique

This article discusses nuclear lifetime of states in ⁹⁴TC and ⁹⁶TC via the pulsed-beam, direct-timing technique

Investigation of the Saturation of Elemental Concentration in the Depth Profile of Low Energy Silver Ion Implants in Silicon

For the efficient absorption of light in a broad wavelength band, Si photovoltaic devices require a high concentration of metal atoms at a shallow depth up to a few 10s of nm in the Si substrates. Low energy (< 50 keV) implantation of Ag ions in Si is one of the most suitable synthesis steps to facilitate the formation of these metal nanoclusters at the shallow depths in Si. However, during the low energy implantation of the heavy ions, one of the unintended consequences is the sputtering of target atoms particularly if the target is made of lower Z materials such as Si. In this study, we have investigated the re-distribution of atoms in the target layers due to the surface sputtering effects from 50 keV Ag ion implantation in Si substrates. Initially, the implant profile was estimated with the widely used static simulation code, theStopping and Range of Ions in Matter (SRIM). However, it’s simulation routine lacks any consideration of the fluence dependent evolution of the target material. Therefore, we have explored the use of another ion-solid interaction code T-DYN, which considers the dynamic changes in the thickness and/or composition of the target material during the implantation process. For 50 keV Ag ion implantation in Si, the T-DYN simulation predicts the Ag ion depth profile reaches a maximum or saturation in the concentration at a critical ion fluence of ~7×1016 atoms/cm2, whereas for a more heavier element like Au, similar saturation in the concentration is predicted at a relatively lower fluence of ~4×1016 atoms/cm2. The depth profiles of the implanted Ag atoms extracted from experiments utilizing the Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy characterization techniques show asymmetric distributions with the position of peak concentration depth gradually moving towards the Si surface with increasing implant ion fluence. Once the implantation ion fluence reached a critical value, the peak value of the elemental concentration is seen saturated similar to the predictions from T-DYN simulations

Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation

By increasing the Sn concentration in Ge1-ySny and Ge1-x-ySixSny systems, these materials can be tuned from indirect to direct bandgap along with increasing electronic and photonic properties. Efforts have been made to synthesize Sn-Ge and Ge-Si-Sn structures and layers to produce lower energy direct bandgap materials. Due to low solid solubility of Sn in Ge and Si-Ge layers, high concentrations of Sn are not achieved by traditional synthesis processes such as chemical vapor deposition or molecular beam epitaxy. Implantation of Sn into Si-Ge systems, followed by rapid thermal annealing or pulse laser annealing, is shown to be an attractive technique for increasing Sn concentration, which can increase efficiencies in photovoltaic applications. In this paper, dynamic ion-solid simulation results are presented. Simulations were performed to determine optimal beam energy, implantation order, and fluence for a multi-step, ion-implantation based synthesis process

K-shell ionization of elements Ca to Zn for 0.5 to 2.5-MeV/amu 14N-ion bombardment

Article discussing K-shell ionization elements Ca to Zn for 0.5 to 2.5-MeV/amu 14N-ion bombardment

Elastic and inelastic scattering of 1.5-MeV neutrons by the even-A isotopes of zirconium and molybdenum

This article discusses elastic and inelastic scattering of 1.5-MeV neutrons by the even-A isotopes of zirconium and molybdenum

Projectile charge-state dependence of K-shell ionization by silicon ions: A comparison of Coulomb ionization theories for direct ionization and electron capture with x-ray production data

Article discussing projectile charge-state dependence of K-shell ionization by silicon ions and a comparison of Coulomb ionization theories for direct ionization and electron capture with x-ray production data

Holographic Gauge Theory with Maxwell Magnetic Field

We first apply the transformation of mixing azimuthal with wrapped coordinate to the 11D M-theory with a stack N M5-branes to find the spacetime of a stack of N D4-branes with magnetic field in 10D IIA string theory, after the Kaluza-Klein reduction. In the near-horizon limit the background becomes the Melvin magnetic field deformed $AdS_6 \times S^4$. Although the solution represents the D-branes under the Melvin RR one-form we use a simple observation to see that it also describes the solution of D-branes under the Maxwell magnetic field. As the magnetic field we consider is the part of the background itself we have presented an alternative to previous literature, because our method does not require the assumption of negligible back reaction. Next, we use the found solution to investigate the meson property through D4/D8 system (Sakai-Sugimoto model) and compare it with those studied by other authors. Finally, we present a detailed analysis about the Wilson loop therein and results show that the external Maxwell magnetic field will enhance the quark-antiquark potential.Comment: Latex 14 pp, add fi