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Submicron Structures Technology and Research
Contains table of contents for Part I, table of contents for Section 1 and reports on thirteen research projects.Joint Services Electronics Program Contract DAAL03-89-C-0001National Science Foundation Grant ECS 87-09806Semiconductor Research Corporation Contract 87-SP-080Hampshire Instruments CorporationNational Science Foundation Grant ECS-85-03443U.S. Air Force - Office of Scientific Research Grant AFOSR-88-0304U.S. Air Force - Office of Scientific Research Grant AFOSR-85-0154X-Opt., IncorporatedNational Aeronautics and Space Administration Contract NAS8-36748AT&T Bell Laboratorie
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Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001)
The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar+ sputtered Si(OOl ) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude . growth. A strategy for influencing the ultimate ripple amplitude is discussed