1 research outputs found
Tunable few electron quantum dots in InAs nanowires
Quantum dots realized in InAs are versatile systems to study the effect of
spin-orbit interaction on the spin coherence, as well as the possibility to
manipulate single spins using an electric field. We present transport
measurements on quantum dots realized in InAs nanowires. Lithographically
defined top-gates are used to locally deplete the nanowire and to form
tunneling barriers. By using three gates, we can form either single quantum
dots, or two quantum dots in series along the nanowire. Measurements of the
stability diagrams for both cases show that this method is suitable for
producing high quality quantum dots in InAs.Comment: 8 pages, 4 figure