Terahertz Response of Field-Effect Transistors in Saturation Regime

We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the saturation regimes.Comment: 11 pages, 3 figure

A Physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices

In this paper we present a physics-based compact model for drain current Id and intrinsic gate–drain and gate–source capacitances CGS and CGD in AlGaN/GaN high electron mobility transistors. An analytical expression for the 2-DEG charge density ns, valid in all the regions of device operation is developed and applied to derive current and capacitances. The drain current model includes important physical effects like velocity saturation, channel length modulation, short channel effect, mobility degradation effect, and self-heating. The expression for ns is used to derive a model for CGS and CGD applicable in all the regions of device operation. The parameters introduced in the model have a clear link to the physical effects facilitating easy extraction of parameter values. The model is in excellent agreement with experimental data for both drain current and capacitances over a typical range of applied voltages and device geometries.7 page(s

Tunable band-pass filter using RF MEMS capacitance and transmission line

Abstract-In this paper we present the design and fabrication of an RF MEMS tunable band-pass filter. The band-pass filter design uses both distributed transmission lines and RF MEMS capacitances together to replace the lumped elements. The use of RF MEMS variable capacitances gives the flexibility of tuning both the centre frequency and the band-width of the band-pass filter. A prototype of the tunable band-pass filter is realized using parallel plate capacitances. The variable shunt and series capacitances are formed by a combination of parallel plate RF MEMS shunt bridges and series cantilevers. The filter operates at C-X band. The measurement results agree well with the simulation results