Phase modulator Patent

Phase modulator with tuned variable length electrical lines including coupling and varactor diode circuit

Methods of determining loads and fiber orientations in anisotropic non-crystalline materials using energy flux deviation

An ultrasonic wave is applied to an anisotropic sample material in an initial direction and an angle of flux deviation of the ultrasonic wave front is measured from this initial direction. This flux deviation angle is induced by the unknown applied load. The flux shift is determined between this flux deviation angle and a previously determined angle of flux deviation of an ultrasonic wave applied to a similar anisotropic reference material under an initial known load condition. This determined flux shift is then compared to a plurality of flux shifts of a similarly tested, similar anisotropic reference material under a plurality of respective, known load conditions, whereby the load applied to the particular anisotropic sample material is determined. A related method is disclosed for determining the fiber orientation from known loads and a determined flux shift

Ultra-fast relaxation of electrons in wide-gap dielectrics

Low-energy electrons scattered in the conduction band of a dielectric solid should behave like Bloch electrons and will interact with perturbations of the atomic lattice, i.e. with phonons. Thus the phonon-based description of low-energy scattering within an energy band structure of a solid bears certain advantages against common free-electron scattering mechanisms. Moreover, the inelastic scattering is described by the dielectric energy loss function. With these collective scattering models we have performed the simulation of excited electron relaxation and attenuation in the insulator SiO2. After excitation to a mean initial energy of several eV their energy relaxation occurs within a short time interval of 200 fs to full thermalization. There is a very rapid impact ionization cooling connected with cascading of electrons at the beginning during the first 10 fs, followed by much slower attenuation due to phonon losses in wide-gap dielectrics and insulators

Negative Differential Resistance Induced by Mn Substitution at SrRuO3/Nb:SrTiO3 Schottky Interfaces

We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the junction ideality factor indicates an increased spatial inhomogeneity of the interface potential with substitution. Furthermore, negative differential resistance was observed at low temperatures, indicating the formation of a resonant state by Mn substitution. By spatially varying the position of the Mn dopants across the interface with single unit cell control, we can isolate the origin of this resonant state to the interface SrRuO$_3$ layer. These results demonstrate a conceptually different approach to controlling interface states by utilizing the highly sensitive response of conducting perovskites to impurities

From Display to Labelled Proofs for Tense Logics

We introduce an effective translation from proofs in the display calculus to proofs in the labelled calculus in the context of tense logics. We identify the labelled calculus proofs in the image of this translation as those built from labelled sequents whose underlying directed graph possesses certain properties. For the basic normal tense logic Kt, the image is shown to be the set of all proofs in the labelled calculus G3Kt

Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4

Electrons at interfaces, driven to minimize their free energy, are distributed differently than in bulk. This can be dramatic at interfaces involving heterovalent compounds. Here we profile an abrupt interface between V 3d2 LaVO3 and V 3d0 LaVO4 using electron energy loss spectroscopy. Although no bulk phase of LaVOx with a V 3d1 configuration exists, we find a nanometer-wide region of V 3d1 at the LaVO3/LaVO4 interface, rather than a mixture of V 3d0 and V 3d2. The two-dimensional sheet of 3d1 electrons is a prototypical electronic reconstruction at an interface between competing ground states.Comment: 14 pages, 5 figure

Electron beam charging of insulators: A self-consistent flight-drift model

International audienceElectron beam irradiation and the self-consistent charge transport in bulk insulating samples are described by means of a new flight-drift model and an iterative computer simulation. Ballistic secondary electron and hole transport is followed by electron and hole drifts, their possible recombination and/or trapping in shallow and deep traps. The trap capture cross sections are the Poole-Frenkel-type temperature and field dependent. As a main result the spatial distributions of currents j(x,t), charges, the field F(x,t) and the potential slope V(x,t) are obtained in a self-consistent procedure as well as the time-dependent secondary electron emission rate sigma(t) and the surface potential V0(t) For bulk insulating samples the time-dependent distributions approach the final stationary state with j(x,t)=const=0 and sigma=1. Especially for low electron beam energies E0=4 keV the incorporation of mainly positive charges can be controlled by the potential VG of a vacuum grid in front of the target surface. For high beam energies E0=10, 20, and 30 keV high negative surface potentials V0=−4, −14, and −24 kV are obtained, respectively. Besides open nonconductive samples also positive ion-covered samples and targets with a conducting and grounded layer (metal or carbon) on the surface have been considered as used in environmental scanning electron microscopy and common SEM in order to prevent charging. Indeed, the potential distributions V(x) are considerably small in magnitude and do not affect the incident electron beam neither by retarding field effects in front of the surface nor within the bulk insulating sample. Thus the spatial scattering and excitation distributions are almost not affected

Method of determining load in anisotropic non-crystalline materials using energy flux deviation

An ultrasonic wave is applied to an anisotropic sample material in an initial direction and the intensity of the ultrasonic wave is measured on an opposite surface of the sample material by two adjacent receiving points located in an array of receiving points. A ratio is determined between the measured intensities of two adjacent receiving points, the ratio being indicative of an angle of flux deviation from the initial direction caused by an unknown applied load. This determined ratio is then compared to a plurality of ratios of a similarly tested, similar anisotropic reference material under a plurality of respective, known load conditions, whereby the load applied to the particular anisotropic sample material is determined. A related method is disclosed for determining the fiber orientation from known loads and a determined flux shift

Electronic Trap Microscopy - A New Mode for Scanning Electron Microscopy (SEM)

Insulating layers on conducting substrate are investigated by means of secondary electron field emission SEFE in a digital SEM. The kinetics of charge storage and release with time and temperature are controlled and recorded by an external computer.The evaluation is performed pixel-wise with respect to electronic trap concentration nt0, trap capture cross section σc and thermal activation energy Et. Mapping of these trap parameters indicates hidden inhomogenities, defects and pre-treatments of the dielectric layers as well as the pattern of thermal bleaching and release of electrons. The latter ones appear as inhomogeneous processes starting with blinking centers and increasing their concentration with time and temperature