Efficient numerical algorithm to simulate a 3D coupled Maxwell–plasma problem

International audienceThis paper proposes an improved algorithm, based upon an explicit finite difference scheme, in order to simulate the plasma breakdown induced by a monochromatic High Power Micro-Wave (HPM). The 3D coupled Maxwell–plasma equations are to be solved. We want to study with this model the geometry of the discharge and plasma formation at high pressure which may contribute to shield microwave sensors or circuits. Generally, the simulation of this kind of problem is very time-consuming, but by using the fact that the plasma evolution in time is slow relatively to the monochromatic source period, we can drastically reduce the simulation time. By considering this assumption, we describe in the paper a process which allows to obtain this important reduction. Finally, an example where we show the gain obtained in terms of computation time with our process is given to validate and illustrate the global work

An Original Method for the Measurement of the Radiated Susceptibility of an Electronic System Using Induced Electromagnetic Non-linear Effects

International audienceThe objective of this paper is to propose an improved approach based on a novel non-intrusive method for easily assess the high frequency CW EM radiated susceptibility of an electronic system by characterizing its non-linear electromagnetic-effects. For this purpose, we have developed a specific harmonic frequency detection system coupled with a mode stirrer reverberating chamber. We describe the principles of the method, and we study a generic device board which is representative of a real electronic system. We evaluate the EM susceptibility of a micro controller in full functional mode and the data exchanges with two types of external 8 Mb SRAM memories. We observe the EM radiated susceptibility of this device by a functional EMC analysis method; then we measure the harmonic frequency content and make a correlation with the EM susceptibility results. We obtain significant differences between the two memory devices, as a consequence of their different management of internal voltage over stress. We are well aware that this method is currently not validated in industrial environments EMC. In this paper, we only wanted to show that the appearance of the highest harmonic level occurs only when that DUT has the highest functional failure