Dense-Coding Attack on Three-Party Quantum Key Distribution Protocols

Cryptanalysis is an important branch in the study of cryptography, including both the classical cryptography and the quantum one. In this paper we analyze the security of two three-party quantum key distribution protocols (QKDPs) proposed recently, and point out that they are susceptible to a simple and effective attack, i.e. the dense-coding attack. It is shown that the eavesdropper Eve can totally obtain the session key by sending entangled qubits as the fake signal to Alice and performing collective measurements after Alice's encoding. The attack process is just like a dense-coding communication between Eve and Alice, where a special measurement basis is employed. Furthermore, this attack does not introduce any errors to the transmitted information and consequently will not be discovered by Alice and Bob. The attack strategy is described in detail and a proof for its correctness is given. At last, the root of this insecurity and a possible way to improve these protocols are discussed.Comment: 6 pages, 3 figure

Two-mode correlated multiphoton bundle emission

The preparation of correlated multiphoton sources is an important research topic in quantum optics and quantum information science. Here, we study two-mode correlated multiphoton bundle emission in a nondegenerate multiphoton Jaynes-Cummings model, which is comprised of a two-level system coupled with two cavity modes. The two-level system is driven by a near-resonant strong laser such that the Mollow regime dominates the physical processes in this system. Under certain resonance conditions, a perfect super-Rabi oscillation between the zero-photon state $|0\rangle_{a}|0\rangle_{b}$ and the ($n+m$)-photon state $|n\rangle_{a}|m\rangle_{b}$ of the two cavity modes can take place. Induced by the photon decay, the two-mode correlated multiphoton bundle emission occurs in this system. More importantly, the results show that there is an antibunching effect between the strongly-correlated photon bundles, so that the system behaves as an antibunched ($n+m$)-photon source. The work opens up a route towards achieving two-mode correlated multiphoton source device, which has potential applications in modern quantum technology.Comment: 16 pages, 6 figures, to appear in Advanced Quantum Technologie

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps, and recent advances in the synthesis, characterization, and device fabrication of the representative MoS$_2$, WS$_2$, WSe$_2$, and MoSe$_2$ TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs layer dependent. In this review, we discuss the basic lattice vibrations of monolayer, multilayer, and bulk TMDs, including high-frequency optical phonons, interlayer shear and layer breathing phonons, the Raman selection rule, layer-number evolution of phonons, multiple phonon replica, and phonons at the edge of the Brillouin zone. The extensive capabilities of Raman spectroscopy in investigating the properties of TMDs are discussed, such as interlayer coupling, spin--orbit splitting, and external perturbations. The interlayer vibrational modes are used in rapid and substrate-free characterization of the layer number of multilayer TMDs and in probing interface coupling in TMD heterostructures. The success of Raman spectroscopy in investigating TMD nanosheets paves the way for experiments on other 2D crystals and related van der Waals heterostructures.Comment: 30 pages, 23 figure

Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2

The anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and potential application, have one more dimension to tune the properties than the isotropic 2D materials. The interlayer vdW coupling determines the properties of 2D multi-layer materials by varying stacking orders. As an important representative anisotropic 2D materials, multilayer rhenium disulfide (ReS2) was expected to be random stacking and lack of interlayer coupling. Here, we demonstrate two stable stacking orders (aa and a-b) of N layer (NL, N>1) ReS2 from ultralow-frequency and high-frequency Raman spectroscopy, photoluminescence spectroscopy and first-principles density functional theory calculation. Two interlayer shear modes are observed in aa-stacked NL-ReS2 while only one interlayer shear mode appears in a-b-stacked NL-ReS2, suggesting anisotropic-like and isotropic-like stacking orders in aa- and a-b-stacked NL-ReS2, respectively. The frequency of the interlayer shear and breathing modes reveals unexpected strong interlayer coupling in aa- and a-b-NL-ReS2, the force constants of which are 55-90% to those of multilayer MoS2. The observation of strong interlayer coupling and polytypism in multi-layer ReS2 stimulate future studies on the structure, electronic and optical properties of other 2D anisotropic materials

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.Comment: 10 pages, 4 figures. Accepted by Nanotechnolog