Virtual contributions from D∗(2007)0D^{\ast}(2007)^0 and D∗(2010)±D^{\ast}(2010)^{\pm} in the B→DπhB\to D\pi h decays

We study the quasi-two-body decays $B\to D^*h \to D\pi h$ with $h=(\pi, K)$ in the perturbative QCD approach and focus on the virtual contributions from the off-shell $D^{\ast}(2007)^0$ and $D^{\ast}(2010)^{\pm}$ in the four measured decays $\bar B^0 \to D^0\pi^+\pi^-$, $\bar B^0\to D^0\pi^+K^-$, $B^- \to D^+\pi^-\pi^-$ and $B^- \to D^+\pi^-K^-$. For the $\bar B^0 \to D^{*+}\pi^-\to D^0\pi^+\pi^-$ and $\bar B^0\to D^{*+}K^-\to D^0\pi^+K^-$ decays, their branching fractions concentrate in a very small region of $m_{D^0\pi^+}$ near $D^{*+}$ pole mass, and the virtual contributions from $D^{*+}$, in the region $m_{D^0\pi^+}>2.1$ GeV, are about $5\%$ of the corresponding quasi-two-body results. We define two ratios $R_{D^{*+}}$ and $R_{D^{*0}}$, from which we conclude that the flavor-$SU(3)$ symmetry will be maintained for the $B\to D^* h\to D\pi h$ decays with very small breaking at any physical value of the $m_{D\pi}$. The $B^-\to D^{*0}\pi^-\to D^0\pi^0\pi^-$ and $B^-\to D^{*0}K^-\to D^0\pi^0K^-$ decays can be employed as a constraint for the $D^{*0}$ decay width, with preferred values consistent with previous theoretical predictions for this quantity.Comment: 12 pages, 5 figures. Published versio

Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs, which result in the potential pinning effect and deteriorate the gate control. While, on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, in which edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, device performance of BP He-TFETs can be further optimized and fulfill the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along armchair direction on-state current can reach above 10$^3$ $\mu$A/$\mu$m with the fixed off-state current of 10 $pA/\mu$m. It is also found that ambipolar effect can be effectively suppressed in BP He-TFETs.Comment: 12 pages, 5 figure

QCD corrections to Upsilon production via color-octet states at the Tevatron and LHC

The NLO QCD corrections to Upsilon production via S-wave color-octet states Upsilon(^1S_0^8,^3S_1^8) at the Tevatron and LHC is calculated. The K factors of total cross section (ratio of NLO to LO) are 1.313 and 1.379 for Upsilon(^1S_0^8) and Upsilon(^3S_1^8) at the Tevatron, while at the LHC they are 1.044 and 1.182, respectively. By fitting the experimental data from the D0, the matrix elements for S-wave color-octet states are obtained. And new predictions for Upsilon production are presented. The prediction for the polarization of inclusive Upsilon contains large uncertainty rising from the polarization of Upsilon from feed-down of chi_b. To further clarify the situation, new measurements on the production and polarization for direct Upsilon are expected.Comment: 13 pages, 10 Figure

Dimensional crossover of thermal conductance in graphene nanoribbons: A first-principles approach

First-principles density-functional calculations are performed to investigate the thermal transport properties in graphene nanoribbons (GNRs). The dimensional crossover of thermal conductance from one to two dimensions (2D) is clearly demonstrated with increasing ribbon width. The thermal conductance of GNRs in a few nanometer width already exhibits an approximate low-temperature dependence of $T^{1.5}$, like that of 2D graphene sheet which is attributed to the quadratic nature of dispersion relation for the out-of-plane acoustic phonon modes. Using a zone-folding method, we heuristically derive the dimensional crossover of thermal conductance with the increase of ribbon width. Combining our calculations with the experimental phonon mean-free path, some typical values of thermal conductivity at room temperature are estimated for GNRs and for 2D graphene sheet, respectively. Our findings clarify the issue of low-temperature dependence of thermal transport in GNRs and suggest a calibration range of thermal conductivity for experimental measurements in graphene-based materials.Comment: 18 pages, 4 figure