A nearly perfect omnidirectional shear-horizontal (SH) wave transducer based on a thickness poled, thickness-shear (d15) piezoelectric ring

The fundamental shear horizontal (SH0) wave in plates is of great importance in the field of nondestructive testing (NDT) and structural health monitoring (SHM) since it is the unique non-dispersive guided wave mode. For practical applications, a phased array system based on omnidirectional SH0 wave transducers is most useful as it can cover a wide range of a plate. However, so far very few omnidirectional SH wave transducers have been developed. In this work, we proposed an omnidirectional SH piezoelectric transducer (OSH-PT) based on a thickness poled piezoelectric ring. The ring is equally divided into twelve sectors and the electric field is circumferentially applied, resulting in a new thickness-shear (d15) mode. Finite element analysis shows that the proposed OSH-PT can excite single-mode SH0 wave and receive the SH0 wave only. Experiments were then conducted to examine the performance of the proposed OSH-PT. Results indicated that it can generate and receive single-mode SH0 wave in a wide frequency range with nearly uniform sensitivities along all directions. Considering its quite simple configuration, compact size and low cost, the proposed OSH-PT is expected to greatly promote the applications of SH waves in the field of NDT and SHM

Realization of face-shear piezoelectric coefficient d36 in PZT ceramics via ferroelastic domain engineering

The piezoelectric face-shear (d36) mode may be the most useful shear mode in piezoelectrics, while currently this mode can only exist in single crystals of specific point groups and cut directions. Theoretically the d36 coefficient vanishes in piezoelectric ceramics because of its transversally isotropic symmetry . In this work, we modified the symmetry of poled PZT ceramics from transversally isotropic to orthogonal through ferroelastic domain switching by applying a high lateral stress along the "2" direction and holding the stress for several hours. After removing the compression, the piezoelectric coefficient d31 is found much larger than d32. Then by cutting the compressed sample along the zxt+45 deg direction, we realized d36 coefficients up to 206 pC/N which is measured by using a modified d33 meter. The obtained large d36 coefficients in PZT ceramics could be very promising for face-shear mode resonators and shear horizontal (SH) wave generation in nondestructive testing.Comment: 12 pages, 5 figure

More ferroelectrics discovered by switching spectroscopy piezoresponse force microscopy?

The local hysteresis loop obtained by switching spectroscopy piezoresponse force microscopy (SS-PFM) is usually regarded as a typical signature of ferroelectric switching. However, such hysteresis loops were also observed in a broad variety of non-ferroelectric materials in the past several years, which casts doubts on the viewpoint that the local hysteresis loops in SS-PFM originate from ferroelectricity. Therefore, it is crucial to explore the mechanism of local hysteresis loops obtained in SS-PFM testing. Here we proposed that non-ferroelectric materials can also exhibit amplitude butterfly loops and phase hysteresis loops in SS-PFM testing due to the Maxwell force as long as the material can show macroscopic D-E hysteresis loops under cyclic electric field loading, no matter what the inherent physical mechanism is. To verify our viewpoint, both the macroscopic D-E and microscopic SS-PFM testing are conducted on a soda-lime glass and a non-ferroelectric dielectric material Ba0.4Sr0.6TiO3. Results show that both materials can exhibit D-E hysteresis loops and SS-PFM phase hysteresis loops, which can well support our viewpoint.Comment: 12 pages,4 figure

External uniform electric field removing flexoelectric effect in epitaxial ferroelectric thin films

Using the modified Landau-Ginsburg-Devonshire thermodynamic theory, it is found that the coupling between stress gradient and polarization, or flexoelectricity, has significant effect on ferroelectric properties of epitaxial thin films, such as polarization, free energy profile and hysteresis loop. However, this effect can be completely eliminated by applying an optimized external, uniform electric field. The role of such uniform electric field is shown to be the same as that of an ideal gradient electric field which can suppress the flexoelectricty effect completely based on the present theory. Since the uniform electric field is more convenient to apply and control than gradient electric field, it can be potentially used to remove the flexoelectric effect induced by stress gradient in epitaxial thin films and enhance the ferroelectric properties.Comment: 5 pages, 3 figure