Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced

Molecular-beam epitaxy of CrSi_2 on Si(111)

Chromium disilicide layers have been grown on Si(111) in a commercial molecular‐beam epitaxy machine. Thin layers (10 nm) exhibit two epitaxial relationships, which have been identified as CrSi_2(0001)//Si(111) with CrSi_2[1010]//Si[101], and CrSi_2(0001)//Si(111) with CrSi_2[1120]//Si[101]. The latter case represents a 30° rotation of the CrSi_2 layer about the Si surface normal relative to the former case. Thick (210 nm) layers were grown by four different techniques, and the best‐quality layer was obtained by codeposition of Cr and Si at an elevated temperature. These layers are not single crystal; the largest grains are observed in a layer grown at 825 °C and are 1–2 μm across