Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

<p>Abstract</p> <p>We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period <it>P </it>and the grating width <it>W</it>. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.</p> <p>PACS</p> <p>81.05.Ea; 81.65.Cf; 81.15.Hi.</p

Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients

The effective piezoelectric coefficients of BaTiO₃ ferroelectric films epitaxially grown on different single crystal substrates with finite thickness have been theoretically analyzed. The effective longitudinal converse piezoelectric coefficients d₃₃ of film and "film-substrate" heterostructure all monotonously increased with increase of the film thickness fraction k, and the latter is always larger than the former at the range of 0 < k < 1. Meanwhile, we also found that the effective piezoelectric coefficients d₃₃ were affected by the substrates due to different elastic constants. These results show that the elastic deformation and clamping effect of substrate have significant impacts on the piezoelectric behavior of bilayer heterostructure

Resistive switching behaviors of oxygen-rich TaOx films prepared by reactive magnetron sputtering

ABSTRACTIn this work, Ta2O5 films were first deposited on Si substrates by reactive magnetron sputtering of a Ta metal target at various substrate temperatures, RF powers and sputtering pressures. The crystal characteristics of these films can be effectively tailored by controlling the sputtering process. Based on the optimized process parameters, tantalum oxide (TaOx) films with different oxygen component content were sputtered on ITO buffered Si substrates and comparatively investigated. The results show that the film with Ta/TaOx/ITO structure has a resistance switching (RS) behavior and its conduction mechanism is closely related to the O2-/O concentration related to the oxygen partial pressure at the dielectric layer and electrode interface. This study provides an in-depth understanding of the component/structure design and structure-activity relationship for high-performance TaOx-based resistive memory

Dating with Scambots:understanding the ecosystem of fraudulent dating applications

In this work, we are focusing on a new and yet uncovered way for malicious apps to gain profit. They claim to be dating apps. However, their sole purpose is to lure users into purchasing premium/VIP services to start conversations with other (likely fake female) accounts in the app. We call these apps as fraudulent dating apps. This paper performs a systematic study to understand the whole ecosystem of fraudulent dating apps. Specifically, we have proposed a three-phase method to detect them and subsequently comprehend their characteristics via analyzing the existing account profiles. Our observation reveals that most of the accounts are not managed by real persons, but by chatbots based on predefined conversation templates. We also analyze the business model of these apps and reveal that multiple parties are actually involved in the ecosystem, including producers who develop apps, publishers who publish apps to gain profit, and the distribution network that is responsible for distributing apps to end users. Finally, we analyze the impact of them to users (i.e., victims) and estimate the overall revenue. Our work is the first systematic study on fraudulent dating apps, and the results demonstrate the urge for a solution to protect users