Method of filling databases of electronic components based on the uniform tables of document parameters

Рассматриваются вопросы разработки методики автоматизированного наполнения баз данных электрорадиоизделий, основанной на объединении таблиц параметров нормативного документа. Показаны её основные этапы и особенности. Предложено оформлять связи между параметрами и правило формирования наименования элементов в текстовом файле-шаблоне. Приводится предварительная оценка времени оформления файлов-шаблонов различных нормативных документов. Показано применениеметодики для автоматического наполнения технологических справочников.The problems of the development of the methodology for the automated filling of databases of electronic products based on the integration of the parameters tables of the normative document are considered. Its main stages and features are shown. It is proposed to formalize the relationship between the parameters and the rule for the formation of the names of elements in a text file-template. A preliminary estimate of the time for creating template files for various normative documents is given. The application of the technique for automatic filling oftechnological databases is shown

Coulomb explosion sputtering of selectively oxidized Si

We have studied multiply charged Arq+ ion induced potential sputtering of a unique system comprising of coexisting Silicon and Silicon oxide surfaces. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), where ripple structures are formed and one side of each ripple gets more oxidized. It is observed that higher the potential energy of Arq+ ion, higher the sputtering yield of the non conducting (oxide) side of the ripple as compared to the semiconducting side. The results are explained in terms of Coulomb explosion model where potential sputtering depends on the conductivity of the ion impact sites.Comment: 9 pages and 3 figure

Ultralong-term high-density data storage with atomic defects in SiC

There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.Comment: 8 pages, 4 figure

Optical Properties of GaSb Nanofibers

Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion beam irradiation as a result of the formation of the amorphous nanofibers. A new mode is observed at ~155 cm-1 both from the unannealed and annealed GaSb nanofiber samples related to the A1g mode of Sb–Sb bond vibration. Room temperature PL measurements of the annealed nanofibers present a wide feature band at ~1.4–1.6 eV. The room temperature PL properties of the irradiated samples presents a large blue shift compared to bulk GaSb. Annealed nanofibers and annealed nanofibers with Au nanodots present two different PL peaks (400 and 540 nm), both of which may originate from Ga or O vacancies in GaO. The enhanced PL and new band characteristics in nanostructured GaSb suggest that the nanostructured fibers may have unique applications in optoelectronic devices

Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si

Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding

Pit formation on poly(methyl methacrylate) due to ablation induced by individual slow highly charged ion impact

Abstract -We report the formation of nano-sized pits on poly(methyl methacrylate) after exposure to slow highly charged ion beams. The pits are formed on the polymer surface as a direct result of individual ion impacts. Intermittent contact mode atomic-force microscopy was employed to study the size evolution of the pits in dependence of potential and kinetic energies of the incident ions. A potential energy threshold value of approximately 7 keV was found for pit formation. Above this value an increase in potential energy results in an increasing pit volume, while the pit shape can be tuned by varying the kinetic energy. Copyright c EPLA, 2012 Introduction. -Controlled and reproducible creation and manipulation of nano-sized objects in all three spatial directions are prominent goals in modern nanotechnology. Recently it has been demonstrated, that individual slow (keV) highly charged ions (HCI) are able to produce nano-sized structural modifications on various substrate surfaces by ion impact (se