Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature

The field emission properties of SnO2nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2at the same applied electric field of 5.0 V/μm

Electron field emission from silicon nanowires

Silicon nanowires were prepared by laser ablation and hydrogen plasma treatment. The electron field emission phenomena were examined by measuring the current-voltage and current-electric field characteristics of the silicon-nanowire films at varying anode-sample separations and nanowire diameters, respectively. The work function, emission area, and field-enhancing factor were determined using the Fowler-Nordheim equation with the results of the current-voltage characteristics analysis

Field emission characteristics of SiC nanowires prepared by chemical vapour deposition

Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics

Growth and emission properties of beta-SiC nanorods

A one step procedure has been developed to grow beta-silicon carbide (beta-SiC) nanorods from a solid carbon and silicon source on silicon substrates using a hot filament chemical vapor deposition. The growth process was catalyzed by the impurities of metallic particles confined in the solid source plate made of a mixture of graphite and silicon powders pressed at 150 degrees C. Hydrogen was introduced into a reaction chamber to react with the solid source. The resulting process produced, hydrocarbon and hydrosilicon radicals, which subsequently reacted on the Si substrate surface and presumably formed SiC nanorods. The nanorods consisted of a crystalline beta-SiC core with an amorphous silicon oxide shell layer. The nanorods were 10-30 nm in diameter and less than 1 mu m in length. Field emission characteristics of the beta-SiC nanorods were investigated using current-voltage measurements and the Fowler-Nordheim equation. The silicon carbide nanorods exhibited high electron field emission with high stability. Along with the ease of preparation, these silicon carbide nanorods are believed to have potential application in electron field emitting devices. (C) 2000 Elsevier Science S.A. All rights reserved

Thin beta-SiC nanorods and their field emission properties

Beta-silicon carbide (beta-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 mu m) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown beta-SiC nanorods on a porous silicon substrate is 13-17 V/mu m. (C) 2000 Elsevier Science B.V. All rights reserved

Straight beta-SiC nanorods synthesized by using C-Si-SiO2

Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical vapor deposition with iron particles as catalyst. A plate made of a C-Si-SiO2 powder mixture was used as carbon and silicon sources. Hydrogen, which was the only gas fed into the deposition system, acts both as a reactant and as a mass transporting medium. The diameter of the beta-SiC nanorod ranged from 20 to 70 nm, while its length was approximately 1 mu m. A growth mechanism of beta-silicon carbide nanorods was proposed. The field emission properties of the beta-silicon carbide nanorods grown on the silicon substrate are also reported. (C) 2000 American Institute of Physics. [S0003-6951(00)03203-4]

High-strain actuator materials based on dielectric elastomers

Oriented SiC nanowires were prepared by reacting aligned carbon nanotubes with SiO at 1400 °C for 2 h. The orientation, diameter, and length of the oriented SiC nanowires were similar to those of the original aligned carbon nanotubes, suggesting that the carbon nanotubes acted as a template to confine the reaction. The field emission properties of the well-oriented nanowires were measured. Field emission current densities of 10 μA/cm2 were observed at applied fields of 0.7-1.5 V/μm, and current densities of 10 mA/cm2 were realized at applied fields as low as 2.5-3.5 V/μm. The results represent the lowest field ever reported for any field-emitting materials at technologically-useful current densities