28 research outputs found
RSFQ Circuitry Using Intrinsic π-Phase Shifts
The latching of temporary data is essential in the rapid single flux quantum (RSFQ) electronics family. Its pulse-driven nature requires two or more stable states in almost all cells. Storage loops must be designed to have exactly two stable states for binary data representation. In conventional RSFQ such loops are constructed to have two stable states, e.g. by using asymmetric bias currents. This bistability naturally occurs when phase-shifting elements are included in the circuitry, such as pi-Josephson junctions or a pi-phase shift associated with an unconventional (d-wave) order parameter symmetry. Both approaches can be treated completely analogously, giving the same results. We have demonstrated for the first time the correct operation of a logic circuit, a toggle-flip-flop, using rings with an intrinsic pi-phase shift (pi-rings) based on hybrid high-Tc to low-Tc Josephson junctions. Because of their natural bistability these pi-rings improve the device symmetry, enhance operation margins and alleviate the need for bias current lines.\ud
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Peculiarities of RSFQ Applications with High-Tc Superconductors - an Approach for Design
The significant progress in the development of Rapid Single Flux Quantum (RSFQ) logic circuits indicates their potential for fast cryoelectronic device applications. The possibilities of realizing logic components based on this principle with high-Tc superconductive (HTS) materials have been studied by means of numerical computations. The most crucial task is to manage the trade-off between desired high critical currents and the loop inductances, which can not be made arbitrarily small. Parameter extractions for typical layout arrangements and dynamical simulations including thermal noise give justification for expecting small scale HTS-RSFQ implementations
Improved Techniques for Long-Distance Signal Propagation within the Rapid Single-Flux Quantum Digital Circuits
Generations of Ultra-Fast Pulse Chains Having Controlled and Variable Time-Domain Parameters by Means of the RSFQ Technique
3D-Feldmodellierung und Simulation zum elektrischen Verhalten von metallischen SET-Grundschaltungen Forschungsabschlussbericht
Available from TIB Hannover: F01B44+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman
3D-Feldberechnung zur Untersuchung des kapazitiven Layouts von metallischen SET-Strukturen
SIGLEAvailable from TIB Hannover: DtF QN1(58,12) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman
Modellierung und Modellanalyse fuer einen nichtlinearen Oszillator zur kapazitiven Fuellstandsidentifizierung Abschlussbericht
SIGLEAvailable from TIB Hannover: F02B226 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman