Intraband transitions in quantum dot-superlattice heterostructures

8 pages, 10 figuresWe present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot-based photodetectors by combining band gap engineering with the self-organized growth of quantum dots. Embedding the self-organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one-band envelope function framework, we are able, in a three-dimensional calculation, to predict the absorption spectra of these devices as well as their polarization properties. These calculations further predict a strong impact of the dots on the superlattice minibands. By comparing aligned, periodic dot stacks with nonperiodic dot arrangements within the superlattice, we can experimentally confirm this prediction

Unbound states in quantum heterostructures

We report in this review on the electronic continuum states of semiconductor Quantum Wells and Quantum Dots and highlight the decisive part played by the virtual bound states in the optical properties of these structures. The two particles continuum states of Quantum Dots control the decoherence of the excited electron – hole states. The part played by Auger scattering in Quantum Dots is also discussed