Thermodynamic properties of Ba1-xMxFe2As2 (M = La and K)

The specific heat $C(T)$ of BaFe$_2$As$_2$ single crystal, electron-doped Ba$_{0.7}$La$_{0.3}$Fe$_2$As$_2$ and hole-doped Ba$_{0.5}$K$_{0.5}$Fe$_2$As$_2$ polycrystals were measured. For undoped BaFe$_2$As$_2$ single crystal, a very sharp specific heat peak was observed at 136 K. This is attributed to the structural and antiferromagnetic transitions occurring at the same temperature. $C(T)$ of the electron-doped non-superconducting Ba$_{0.7}$La$_{0.3}$Fe$_2$As$_2$ also shows a small peak at 120 K, indicating a similar but weaker structural/antiferromagnetic transition. For the hole-doped superconducting Ba$_{0.5}$K$_{0.5}$Fe$_2$As$_2$, a clear peak of $C/T$ was observed at $T_c$ = 36 K, which is the highest peak seen at superconducting transition for iron-based high-$T_c$ superconductors so far. The electronic specific heat coefficient $\gamma$ and Debye temperature $\Theta_D$ of these compounds were obtained from the low temperature data

Superconductivity induced by oxygen deficiency in Sr-doped LaOFeAs

We synthesized Sr-doped $La_{0.85}Sr_{0.15}OFeAs$ sample with single phase, and systematically studied the effect of oxygen deficiency in the Sr-doped LaOFeAs system. It is found that substitution of Sr for La indeed induces the hole carrier evidenced by positive thermoelectric power (TEP), but no bulk superconductivity is observed. The superconductivity can be realized by annealing the as-grown sample in vacuum to produce the oxygen deficiency. With increasing the oxygen deficiency, the superconducting transition temperature ($T_c$) increases and maximum $T_c$ reaches about 26 K the same as that in La(O,F)FeAs. TEP dramatically changes from positive to negative in the nonsuperconducting as-grown sample to the superconducting samples with oxygen deficiency. While $R_H$ is always negative for all samples (even for Sr-doped as grown sample). It suggests that the $La_{0.85}Sr_{0.15}O_{1-\delta}FeAs$ is still electron-type superconductor.Comment: 4 pages, 4 figure

Perceptual Zero-Tree Coding with Efficient Optimization for Embedded Platforms

This study proposes a block-edge-based perceptual zero-tree coding (PZTC) method, which is implemented with efficientoptimization on the embedded platform. PZTC combines two novel compression concepts for coding efficiency and quality:block-edge detection (BED) and the low-complexity and low-memory entropy coder (LLEC). The proposed PZTC wasimplemented as a fixed-point version and optimized on the DSP-based platform based on both the presented platformindependentand platform-dependent optimization technologies. For platform-dependent optimization, this study examinesthe fixed-point PZTC and analyzes the complexity to optimize PZTC toward achieving an optimal coding efficiency.Furthermore, hardware-based platform-dependent optimizations are presented to reduce the memory size. Theperformance, such as compression quality and efficiency, is validated by experimental results

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.Comment: 5 pages, 4 figures