Spin flip scattering in magnetic junctions

Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance, which saturates at low temperatures. The conductance increases at high fields. ii) Magnon assisted tunneling reduces the magnetoresistance as $T^{3/2}$, and leads to a non ohmic contribution to the resistance which goes as $V^{3/2}$, iii) Surface antiferromagnetic magnons, which may appear if the interface has different magnetic properties from the bulk, gives rise to $T^2$ and $V^2$ contributions to the magnetoresistance and resistance, respectively, and, iv) Coulomb blockade effects may enhance the magnetoresistance, when transport is dominated by cotunneling processes.Comment: 5 page

Spin-accumulation in small ferromagnetic double barrier junctions

The non-equilibrium spin accumulation in ferromagnetic double barrier junctions is shown to govern the transport in small structures. Transport properties of such systems are described by a generalization of the theory of the Coulomb blockade. The spin accumulation enhances the magnetoresistance. The transient non-linear transport properties are predicted to provide a unique experimental evidence of the spin-accumulation in the form of a reversed current on time scales of the order of the spin-flip relaxation time.Comment: 4 pages, 3 figures, to appear in PR

Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the low order sequential tunneling and co-tunneling regimes, a large magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when the thermal energy is larger than the charging energy, the magnetoresistance ratio is only slightly enhanced.Comment: updated versio

Mesoscopic Tunneling Magnetoresistance

We study spin-dependent transport through ferromagnet/normal-metal/ferromagnet double tunnel junctions in the mesoscopic Coulomb blockade regime. A general transport equation allows us to calculate the conductance in the absence or presence of spin-orbit interaction and for arbitrary orientation of the lead magnetizations. The tunneling magnetoresistance (TMR), defined at the Coulomb blockade conductance peaks, is calculated and its probability distribution presented. We show that mesoscopic fluctuations can lead to the optimal value of the TMR.Comment: 5 pages, 3 eps figures included using epsf.sty. Revised text and improved notation, fig. 2 removed, explicit equations for the GSE case adde

Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers

Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through MgO barriers is only beginning to be unravelled. Using planar magnetic tunnel junctions in which ultra-thin layers of magnetic metals are deposited in the middle of a MgO tunnel barrier here we demonstrate that the TMR is strongly modified when these layers are discontinuous and composed of small pancake shaped nanodots. At low temperatures, in the Coulomb blockade regime, for layers less than ~1 nm thick, the conductance of the junction is increased at low bias consistent with Kondo assisted tunneling. In the same regime we observe a suppression of the TMR. For slightly thicker layers, and correspondingly larger nanodots, the TMR is enhanced at low bias, consistent with co-tunneling.Comment: Nano Letters (in press

The injury epidemiology of cyclists based on a road trauma registry

<p>Abstract</p> <p>Background</p> <p>Bicycle use has increased in some of France's major cities, mainly as a means of transport. Bicycle crashes need to be studied, preferably by type of cycling. Here we conduct a descriptive analysis.</p> <p>Method</p> <p>A road trauma registry has been in use in France since 1996, in a large county around Lyon (the Rhône, population 1.6 million). It covers outpatients, inpatients and fatalities. All injuries are coded using the Abbreviated Injury Scale (AIS). Proxies were used to identify three types of cycling: learning = children (0-10 years old); sports cycling = teenagers and adults injured outside towns; cycling as means of transport = teenagers and adults injured in towns. The study is based on 13,684 cyclist casualties (1996-2008).</p> <p>Results</p> <p>The percentage of cyclists injured in a collision with a motor vehicle was 8% among children, 17% among teenagers and adults injured outside towns, and 31% among those injured in towns. The percentage of serious casualties (MAIS 3+) was 4.5% among children, 10.9% among adults injured outside towns and 7.2% among those injured in towns. Collisions with motor-vehicles lead to more internal injuries than bicycle-only crashes.</p> <p>Conclusion</p> <p>The description indicates that cyclist type is associated with different crash and injury patterns. In particular, cyclists injured in towns (where cycling is increasing) are generally less severely injured than those injured outside towns for both types of crash (bicycle-only crashes and collisions with a motor vehicle). This is probably due to lower speeds in towns, for both cyclists and motor vehicles.</p

The family as a determinant of stunting in children living in conditions of extreme poverty: a case-control study

BACKGROUND: Malnutrition in children can be a consequence of unfavourable socioeconomic conditions. However, some families maintain adequate nutritional status in their children despite living in poverty. The aim of this study was to ascertain whether family-related factors are determinants of stunting in young Mexican children living in extreme poverty, and whether these factors differ between rural or urban contexts. METHODS: A case-control study was conducted in one rural and one urban extreme poverty level areas in Mexico. Cases comprised stunted children aged between 6 and 23 months. Controls were well-nourished children. Independent variables were defined in five dimensions: family characteristics; family income; household allocation of resources and family organisation; social networks; and child health care. Information was collected from 108 cases and 139 controls in the rural area and from 198 cases and 211 controls in the urban area. Statistical analysis was carried out separately for each area; unconditional multiple logistic regression analyses were performed to obtain the best explanatory model for stunting. RESULTS: In the rural area, a greater risk of stunting was associated with father's occupation as farmer and the presence of family networks for child care. The greatest protective effect was found in children cared for exclusively by their mothers. In the urban area, risk factors for stunting were father with unstable job, presence of small social networks, low rate of attendance to the Well Child Program activities, breast-feeding longer than six months, and two variables within the family characteristics dimension (longer duration of parents' union and migration from rural to urban area). CONCLUSIONS: This study suggests the influence of the family on the nutritional status of children under two years of age living in extreme poverty areas. Factors associated with stunting were different in rural and urban communities. Therefore, developing and implementing health programs to tackle malnutrition should take into account such differences that are consequence of the social, economic, and cultural contexts in which the family lives

Extrinsic Magnetotransport Phenomena in Ferromagnetic Oxides

This review is focused on extrinsic magnetotransport effects in ferromagnetic oxides. It consists of two parts; the second part is devoted to an overview of experimental data and theoretical models for extrinsic magnetotransport phenomena. Here a critical discussion of domain-wall scattering is given. Results on surfacial and interfacial magnetism in oxides are presented. Spin-polarized tunnelling in ferromagnetic junctions is reviewed and grain-boundary magnetoresistance is interpreted within a model of spin-polarized tunnelling through natural oxide barriers. The situation in ferromagnetic oxides is compared with data and models for conventional ferromagnets. The first part of the review summarizes basic material properties, especially data on the spin-polarization and evidence for half-metallicity. Furthermore, intrinsic conduction mechanisms are discussed. An outlook on the further development of oxide spin-electronics concludes this review.Comment: 133 pages, 47 figures, submitted to Rep. Prog. Phy