Investigation of Band Tailing in Sputtered ZnO Al Thin Films Regarding Structural Properties and Impurities

Thin films of pure aluminum doped ZnO and with addition of nitrogen, oxygen and hydrogen have been prepared by magnetron sputtering. The spectral absorption coefficient close to the band gap energy has been determined by spectrophotometry and analyzed regarding band tailing and creation of defect bands. We found, that an improvement of Raman crystallinity under O2 rich growth conditions is not accompanied by a suppression of band tailing as expected. An additional absorption feature evolves for layers grown in N2 containing atmosphere. Doping with hydrogen attenuates sub band gap absorptio

Material properties of high mobility TCOs and application to solar cells

The benefit of achieving high electron mobilities in transparent conducting oxides TCOs is twofold they first exhibit superior optical properties, especially in the NIR spectral range, and secondly their low resistivity enables the usage of thinner films. Remarkably high mobilities can be obtained in Al doped zinc oxide by post deposition annealing under a protective layer. The procedure has not only shown to increase mobility, but also strongly reduces sub bandgap absorption. Extensive optical, electrical and structural characterization is carried out in the films in order to clarify the microscopic origins of the changes in material properties. While the annealing of defect states, most likely deep acceptors, seems clear, earlier results also suggest some influence of grain boundaries. Tailing, on the contrary, seems to be linked to extended defects. In application to a Si H c Si H thin film solar cells the films have already shown to increase spectral response. When reducing the film thickness, the main challenge is to provide a suitable light trapping scheme. Normally this is achieved by a wet chemical etching step in diluted HCl, which provides a surface structure with suitable light scattering properties. Therefore a TCO independent light scattering approach using textures glass was applied in conjunction with the high mobility zinc oxide. The substrate enables the use of very thin TCO layers with a strongly reduced parasitic absorptio

Neural networks for nonlinear discriminant analysis in continuous speech recognition

In this paper neural networks for Nonlinear Discriminant Analysis in continuous speech recognition are presented. Multilayer Perceptrons are used to estimate a-posteriori probabilities for Hidden-Markov Model states, which are the optimal discriminant features for the separation of the HMM states. The a-posteriori probabilities are transformed by a principal component analysis to calculate the new features for semicontinuous HMMs, which are trained by the known Maximum-Likelihood training. The nonlinear discriminant transformation is used in speaker-independent phoneme recognition experiments and compared to the standard Linear Discriminant Analysis technique

Development of direct current magnetron sputtered TiO2 x thin films as buffer layers for copper indium gallium diselenide based solar cells

We describe the development and characterization of direct current magnetron sputtered titanium dioxide thin films from ceramic targets mixed with metallic titanium particles. The aim of this article is to assess their suitability for the application as buffer layer in copper indium gallium diselenide CIGSe based solar cells. The absorber material is produced in a semi industrial, roll to roll hybrid sputter co evaporation process. A potential strategy to modify electro optical properties of TiO2 thin films by controlling the concentration of defects, such as oxygen vacancies, is investigated by X ray photoelectron spectroscopy XPS , transmission reflection spectroscopy, spectroscopic ellipsometry, and cathodoluminescence. The presence of oxygen in the plasma during the sputter deposition process has a crucial impact on the electron transport mechanism in the studied devices. The source of the changed device characteristic can be found in modified band discontinuities at the absorber buffer interface and in an oxidized CIGSe surface, indicated by the presence of cationic selenium, as detected by XPS. We sketch a tentative band alignment diagram and outline the range of possible modifications. The harmful effect of oxygen in the plasma forces the omission of oxygen in the process and restricts the possibilities to modify the material properties of the TiO2 layers, and consequently the prospects for an application on CIGSe. Nevertheless, the results of this work depict the principal eligibility, albeit optimization on both sides of the absorber buffer interface are inevitable for an improved cell performanc

Optoelectrical analysis of TCO Silicon oxide double layers at the front and rear side of silicon heterojunction solar cells

Silicon Heterojunction has become a promising technology to substitute passivated emitter and rear contact PERC solar cells in pursuance of lower levelized cost of electricity through high efficiency devices. While high open circuit voltages and fill factors are reached, current loss related to the front and rear contacts, such as the transparent conductive oxide TCO layers is still a limiting factor to come closer to the efficiency limit of silicon based solar cells. Furthermore, reducing indium consumption for the TCO has become mandatory to push silicon heterojunction technology towards a terawatt scale production due to material scarcity and costs. To address these issues dielectric layers, such as silicon dioxide or nitride cappings are implemented to reduce TCO thicknesses both diminishing parasitic absorption and material consumption. However, reducing the TCO thickness comes in cost of resistive losses. Furthermore, the TCO properties do vary with thickness and neighboring layer configuration altering the optimization frame of the device. In this paper we present a detailed analysis to quantify the optoelectrical losses trade off associated to the TCO thickness reduction in such layer stacks. Through the analysis we show and explain why experimental bifacial cells with 20 nm front and rear TCO perform at a similar level to reference cells with 75 nm under front and rear illumination reaching efficiency close to 24 at 92 bifaciality. We present as well a simple interconnection method via screen printing metallization to implement a thin TCO silicon dioxide silver reflector enhancing current density from 39.6 to 40.4 mA cm2 without compromising resistive losses resulting in a 0.2 absolute solar cell efficiency increase from a bifacial design 23.5 23.7 . Finally, following this approach we present a certified champion cell with an efficiency of 24.

Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard x-ray photoelectron spectroscopy

Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon /aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface – more pronounced for aluminum than for zinc – as explanation. Based on these insights the complex chemical interface structure is discussed

EMIL The energy materials in situ laboratory Berlin a novel characterization facility for photovoltaic and energy materials

A knowledge based approach towards developing a new generation of solar energy conversion devices requires a fast and direct feedback between sophisticated analytics and state of the art processing test facilities for all relevant material classes. A promising approach is the coupling of synchrotron based X ray characterization techniques, providing the unique possibility to map the electronic and chemical structure of thin layers and interface regions with relevant in system in situ sample preparation or in operando analysis capabilities in one dedicated laboratory. EMIL, the Energy Materials In situ Laboratory Berlin, is a unique facility at the BESSY II synchrotron light source. EMIL will be dedicated to the in system, in situ, and in operando X ray analysis of materials and devices for energy conversion and energy storage technologies including photovoltaic applications and photo electrochemical processes. EMIL comprises up to five experimental end stations, three of them can access X rays in an energy range of 80 eV 10 keV. For example, one key setup of EMIL combines a suite of advanced spectroscopic characterization tools with industry relevant deposition facilities in one integrated ultra high vacuum system. These deposition tools allow the growth of PV devices based on silicon, compound semiconductors, hybrid heterojunctions, and organo metal halide perovskites on up to 6 sized substrates. EMIL will serve as a research platform for national and international collaboration in the field of photovoltaic photocatalytic energy conversion and beyond. In this paper, we will provide an overview of the analytic and material capabilities at EMIL

Hybrid Perovskite Degradation from an Optical Perspective A Spectroscopic Ellipsometry Study from the Deep Ultraviolet to the Middle Infrared

A quantitative analysis of the thermally induced degradation of various device relevant multi cation hybrid perovskite films is performed using spectroscopic ellipsometry, for temperatures between 80 and 120 C. The studied compositions are a triple cation perovskite Cs0.05 MA0.17FA0.83 0.95Pb Br0.17I0.83 3, a Rb containing variant Rb0.05Cs0.05 MA0.17FA0.83 0.90Pb Br0.17I0.83 3, and a methylammonium free Rb0.05Cs0.10FA0.85PbI3 composition. A very wide combined spectral range of 200 nm to 25 amp; 956;m is covered by combining the data from two separate instruments. The relative changes in organic cation concentrations are quantified from the middle infrared molecular absorption bands, leveraging the use of point by point fitting for increased sensitivity. Additionally, the formation of PbI2 and non perovskite amp; 948; CsPbI3 phases is evidenced from Bruggemann effective medium fits to the visible and ultraviolet complex refractive indices. Methylammonium is almost completely depleted from the relevant compositions within 100 to 285 min of thermal annealing. The MA free perovskite degrades faster at intermediate temperatures, which is attributed to phase instability due to the formation of amp; 948; CsPbI3 in addition to PbI

Measurement of inclusive D*+- and associated dijet cross sections in photoproduction at HERA

Inclusive photoproduction of D*+- mesons has been measured for photon-proton centre-of-mass energies in the range 130 < W < 280 GeV and a photon virtuality Q^2 < 1 GeV^2. The data sample used corresponds to an integrated luminosity of 37 pb^-1. Total and differential cross sections as functions of the D* transverse momentum and pseudorapidity are presented in restricted kinematical regions and the data are compared with next-to-leading order (NLO) perturbative QCD calculations using the "massive charm" and "massless charm" schemes. The measured cross sections are generally above the NLO calculations, in particular in the forward (proton) direction. The large data sample also allows the study of dijet production associated with charm. A significant resolved as well as a direct photon component contribute to the cross section. Leading order QCD Monte Carlo calculations indicate that the resolved contribution arises from a significant charm component in the photon. A massive charm NLO parton level calculation yields lower cross sections compared to the measured results in a kinematic region where the resolved photon contribution is significant.Comment: 32 pages including 6 figure