Stability of negative and positive trions in quantum wires

Binding energies of negative ($X^-$) and positive trions ($X^+$) in quantum wires are studied for strong quantum confinement of carriers which results in a numerical exactly solvable model. The relative electron and hole localization has a strong effect on the stability of trions. For equal hole and electron confinement, $X^+$ is more stable but a small imbalance of the particle localization towards a stronger hole localization e.g. due to its larger effective mass, leads to the interchange of $X^-$ and $X^+$ recombination lines in the photoluminescent spectrum as was recently observed experimentally. In case of larger $X^-$ stability, a magnetic field oriented parallel to the wire axis leads to a stronger increase of the $X^+$ binding energy resulting in a crossing of the $X^+$ and $X^-$ lines

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm