19 research outputs found
Flopping-mode electric dipole spin resonance
Traditional approaches to controlling single spins in quantum dots require
the generation of large electromagnetic fields to drive many Rabi oscillations
within the spin coherence time. We demonstrate "flopping-mode" electric dipole
spin resonance, where an electron is electrically driven in a Si/SiGe double
quantum dot in the presence of a large magnetic field gradient. At zero
detuning, charge delocalization across the double quantum dot enhances coupling
to the drive field and enables low power electric dipole spin resonance.
Through dispersive measurements of the single electron spin state, we
demonstrate a nearly three order of magnitude improvement in driving efficiency
using flopping-mode resonance, which should facilitate low power spin control
in quantum dot arrays
Flopping-mode electric dipole spin resonance
Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate “flopping-mode” electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low-power electric dipole spin resonance. Through dispersive measurements of the single-electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low-power spin control in quantum dot arrays
Gesetzliche Vorschriften zur Schadstoff- und Verbrauchsbegrenzung bei Verbrennungsmotoren (Stand 1992)
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High-fidelity quantum gates in Si/SiGe double quantum dots
Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly
Recommended from our members
High-fidelity quantum gates in Si/SiGe double quantum dots
Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly