5,905 research outputs found
Exact solution of the Schr\"{o}dinger equation for an hydrogen atom at the interface between the vacuum and a topologically insulating surface
When an hydrogen atom is brought near to the interface between
-media, the quantum-mechanical motion of the electron will be affected
by the electromagnetic interaction between the atomic charges and the
-interface, which is described by an axionic extension of Maxwell
electrodynamics in the presence of a boundary. In this paper we investigate the
atom-surface interaction effects upon the energy levels and wave functions of
an hydrogen atom placed at the interface between a -medium and the
vacuum. In the approximation considered, the Schr\"{o}dinger equation can be
exactly solved by separation of variables in terms of hypergeometic functions
for the angular part and hydrogenic functions for the radial part. In order to
make such effects apparent we deal with unrealistic high values of the
-parameter. We also compute the energy shifts using perturbation theory
for a particular small value of and we demonstrate that they are in a
very good agreement with the ones obtained from the exact solution.Comment: 20 pages, 17 figures, 6 tables, Accepted for publication in the
European Physics Journal
Axisymmetric pulse recycling and motion in bulk semiconductors
The Kroemer model for the Gunn effect in a circular geometry (Corbino disks)
has been numerically solved. The results have been interpreted by means of
asymptotic calculations. Above a certain onset dc voltage bias, axisymmetric
pulses of the electric field are periodically shed by an inner circular
cathode. These pulses decay as they move towards the outer anode, which they
may not reach. As a pulse advances, the external current increases continuously
until a new pulse is generated. Then the current abruptly decreases, in
agreement with existing experimental results. Depending on the bias, more
complex patterns with multiple pulse shedding are possible.Comment: 8 pages, 15 figure
On the Photorefractive Gunn Effect
We present and numerically solve a model of the photorefractive Gunn effect.
We find that high field domains can be triggered by phase-locked interference
fringes, as it has been recently predicted on the basis of linear stability
considerations. Since the Gunn effect is intrinsically nonlinear, we find that
such considerations give at best order-of-magnitude estimations of the
parameters critical to the photorefractive Gunn effect. The response of the
system is much more complex including multiple wave shedding from the injecting
contact, wave suppression and chaos with spatial structure.Comment: Revtex, 8 pag., 4 fig. (jpg), submit to Physical Review
Chaos in resonant-tunneling superlattices
Spatio-temporal chaos is predicted to occur in n-doped semiconductor
superlattices with sequential resonant tunneling as their main charge transport
mechanism. Under dc voltage bias, undamped time-dependent oscillations of the
current (due to the motion and recycling of electric field domain walls) have
been observed in recent experiments. Chaos is the result of forcing this
natural oscillation by means of an appropriate external microwave signal.Comment: 3 pages, LaTex, RevTex, 3 uuencoded figures (1.2M) are available upon
request from [email protected], to appear in Phys.Rev.
Chaotic motion of space charge wavefronts in semiconductors under time-independent voltage bias
A standard drift-diffusion model of space charge wave propagation in
semiconductors has been studied numerically and analytically under dc voltage
bias. For sufficiently long samples, appropriate contact resistivity and
applied voltage - such that the sample is biased in a regime of negative
differential resistance - we find chaos in the propagation of nonlinear fronts
(charge monopoles of alternating sign) of electric field. The chaos is always
low-dimensional, but has a complex spatial structure; this behavior can be
interpreted using a finite dimensional asymptotic model in which the front
(charge monopole) positions and the electrical current are the only dynamical
variables.Comment: 12 pages, 8 figure
Dynamics of Electric Field Domains and Oscillations of the Photocurrent in a Simple Superlattice Model
A discrete model is introduced to account for the time-periodic oscillations
of the photocurrent in a superlattice observed by Kwok et al, in an undoped 40
period AlAs/GaAs superlattice. Basic ingredients are an effective negative
differential resistance due to the sequential resonant tunneling of the
photoexcited carriers through the potential barriers, and a rate equation for
the holes that incorporates photogeneration and recombination. The
photoexciting laser acts as a damping factor ending the oscillations when its
power is large enough. The model explains: (i) the known oscillatory static I-V
characteristic curve through the formation of a domain wall connecting high and
low electric field domains, and (ii) the photocurrent and photoluminescence
time-dependent oscillations after the domain wall is formed. In our model, they
arise from the combined motion of the wall and the shift of the values of the
electric field at the domains. Up to a certain value of the photoexcitation,
the non-uniform field profile with two domains turns out to be metastable:
after the photocurrent oscillations have ceased, the field profile slowly
relaxes toward the uniform stationary solution (which is reached on a much
longer time scale). Multiple stability of stationary states and hysteresis are
also found. An interpretation of the oscillations in the photoluminescence
spectrum is also given.Comment: 34 pages, REVTeX 3.0, 10 figures upon request, MA/UC3M/07/9
Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices
We review the occurrence of electric-field domains in doped superlattices
within a discrete drift model. A complete analysis of the construction and
stability of stationary field profiles having two domains is carried out. As a
consequence, we can provide a simple analytical estimation for the doping
density above which stable stable domains occur. This bound may be useful for
the design of superlattices exhibiting self-sustained current oscillations.
Furthermore we explain why stable domains occur in superlattices in contrast to
the usual Gunn diode.Comment: Tex file and 3 postscript figure
A moment based approach to the dynamical solution of the Kuramoto model
We examine the dynamics of the Kuramoto model with a new analytical approach.
By defining an appropriate set of moments the dynamical equations can be
exactly closed. We discuss some applications of the formalism like the
existence of an effective Hamiltonian for the dynamics. We also show how this
approach can be used to numerically investigate the dynamical behavior of the
model without finite size effects.Comment: 6 pages, 5 figures, Revtex file, to appear in J. Phys.
Opportunistic Infections in Patients with Temporal Arteritis Treated with Corticosteroids
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/111238/1/j.1532-5415.1997.tb00949.x.pd
Universality of the Gunn effect: self-sustained oscillations mediated by solitary waves
The Gunn effect consists of time-periodic oscillations of the current flowing
through an external purely resistive circuit mediated by solitary wave dynamics
of the electric field on an attached appropriate semiconductor. By means of a
new asymptotic analysis, it is argued that Gunn-like behavior occurs in
specific classes of model equations. As an illustration, an example related to
the constrained Cahn-Allen equation is analyzed.Comment: 4 pages,3 Post-Script figure
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