High-voltage distributors

Two distributors reduce high-voltage breakdowns and corona discharges. Both distributors are constructed to prevent air traps and facilitate servicing without soldering. Occurrence of coronas is also minimized due to smooth surfaces of device

A chronological proposal for the huerta of Elche

[EN] In this paper we propose an Andalusian chronology for the irrigated region of Elche which includes not only the area declared World Heritage by the UNESCO (Martínez, 1999) but also the whole irrigated area of what is called Camp d'Elx. We also propose a historical evolution of the different parts constituting this landscape. We base our proposal on what we consider to be its main element: its hydraulic infrastructures. We will analyse from two different but complementary perspectives – that of their names and that of their measurements – the constructions made for collecting water and distributing it throughout the plots. In addition, we take into account the use of the tahúlla as a surface unit – which is still used today in the Camp d'Elx – as its etymology is undoubtedly Arabic and its value is based on the Islamic cubit.Aviñó Mcchesney, DF. (2015). A chronological proposal for the huerta of Elche. En Irrigation, Society and Landscape. Tribute to Tom F. Glick. Editorial Universitat Politècnica de València. 31-49. https://doi.org/10.4995/ISL2014.2014.150OCS314

Anderson Transition in Disordered Graphene

We use the regularized kernel polynomial method (RKPM) to numerically study the effect disorder on a single layer of graphene. This accurate numerical method enables us to study very large lattices with millions of sites, and hence is almost free of finite size errors. Within this approach, both weak and strong disorder regimes are handled on the same footing. We study the tight-binding model with on-site disorder, on the honeycomb lattice. We find that in the weak disorder regime, the Dirac fermions remain extended and their velocities decrease as the disorder strength is increased. However, if the disorder is strong enough, there will be a {\em mobility edge} separating {\em localized states around the Fermi point}, from the remaining extended states. This is in contrast to the scaling theory of localization which predicts that all states are localized in two-dimensions (2D).Comment: 4 page

Ultracold Neutron Production in a Pulsed Neutron Beam Line

We present the results of an Ultracold neutron (UCN) production experiment in a pulsed neutron beam line at the Los Alamos Neutron Scattering Center. The experimental apparatus allows for a comprehensive set of measurements of UCN production as a function of target temperature, incident neutron energy, target volume, and applied magnetic field. However, the low counting statistics of the UCN signal expected can be overwhelmed by the large background associated with the scattering of the primary cold neutron flux that is required for UCN production. We have developed a background subtraction technique that takes advantage of the very different time-of-flight profiles between the UCN and the cold neutrons, in the pulsed beam. Using the unique timing structure, we can reliably extract the UCN signal. Solid ortho-D$_2$ is used to calibrate UCN transmission through the apparatus, which is designed primarily for studies of UCN production in solid O$_2$. In addition to setting the overall detection efficiency in the apparatus, UCN production data using solid D$_2$ suggest that the UCN upscattering cross-section is smaller than previous estimates, indicating the deficiency of the incoherent approximation widely used to estimate inelastic cross-sections in the thermal and cold regimes

US-LHC Magnet Database and conventions

The US-LHC Magnet Database is designed for production-magnet quality assurance, field and alignment error impact analysis, cryostat assembly assistance, and ring installation assistance. The database consists of tables designed to store magnet field and alignment measurements data and quench data. This information will also be essential for future machine operations including local IR corrections. (7 refs)

Atomic Scale Memory at a Silicon Surface

The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.Comment: 13 pages, 5 figures, accepted by Nanotechnolog

Epitaxial graphene: a new material

Graphene, a two-dimensional sheet of sp2-bonded car-bon arranged in a honeycomb lattice, is not only the building block of fullerenes, carbon nano tubes (CNTs) and graphite, it also has interesting properties, which have caused a flood of activities in the past few years. The possibility to grow graphitic films with thick-nesses down to a single graphene layer epitaxially on SiC{0001} surfaces is promising for future applications. The two-dimensional nature of epitaxial graphene films make them ideal objects for surface science techniques such as photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy. The present article summarizes results from recent photoemission studies covering a variety of aspects such as the growth of epitaxial graphene and few layer graphene, the elec

Electron-Phonon Coupling in Highly-Screened Graphene

Photoemission studies of graphene have resulted in a long-standing controversy concerning the strength of the experimental electron-phonon interaction in comparison with theoretical calculations. Using high-resolution angle-resolved photoemission spectroscopy we study graphene grown on a copper substrate, where the metallic screening of the substrate substantially reduces the electron-electron interaction, simplifying the comparison of the electron-phonon interaction between theory and experiment. By taking the nonlinear bare bandstructure into account, we are able to show that the strength of the electron-phonon interaction does indeed agree with theoretical calculations. In addition, we observe a significant bandgap at the Dirac point of graphene.Comment: Submitted to Phys. Rev. Lett. on July 20, 201

Gd disilicide nanowires attached to Si(111) steps

Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-1 1 0 ] direction, which is consistent with a lattice match of 0.8% with the a-axis of the hexagonal silicide, together with a large mismatch in all other directions. This mechanism is similar to that observed previously on Si(100). In contrast to Si(100), the wires are always attached to step edges on Si(111) and can thus be grown selectively on regular step arrays.Comment: 3 pages including 4 figure

Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC.Comment: Acknowledgment added. 11 pages, 3 figure