Broadband SNAIL parametric amplifier with microstrip impedance transformer

Josephson parametric amplifiers have emerged as a promising platform for quantum information processing and squeezed quantum states generation. Travelling wave and impedance-matched parametric amplifiers provide broad bandwidth for high-fidelity single-shot readout of multiple qubit superconducting circuits. Here, we present a quantum-limited 3-wave-mixing parametric amplifier based on superconducting nonlinear asymmetric inductive elements (SNAILs), whose useful bandwidth is enhanced with an on-chip two-section impedance-matching circuit based on microstrip transmission lines. The amplifier dynamic range is increased using an array of sixty-seven SNAILs with 268 Josephson junctions, forming a nonlinear quarter-wave resonator. Operating in a current-pumped mode, we experimentally demonstrate an average gain of $17 dB$ across $300 MHz$ bandwidth, along with an average saturation power of $- 100 dBm$, which can go as high as $- 97 dBm$ with quantum-limited noise performance. Moreover, the amplifier can be fabricated using a simple technology with just a one e-beam lithography step. Its central frequency is tuned over a several hundred megahertz, which in turn broadens the effective operational bandwidth to around $1.5 GHz$.Comment: 7 pages, 3 figure

Improving Josephson junction reproducibility for superconducting quantum circuits: junction area fluctuation

Josephson superconducting qubits and parametric amplifiers are prominent examples of superconducting quantum circuits that have shown rapid progress in recent years. With the growing complexity of such devices, the requirements for reproducibility of their electrical properties across a chip have become stricter. Thus, the critical current $I_c$ variation of the Josephson junction, as the most important electrical parameter, needs to be minimized. Critical current, in turn, is related to normal-state resistance the Ambegaokar-Baratoff formula, which can be measured at room temperature. Here, we focus on the dominant source of Josephson junction critical current non-uniformity junction area variation. We optimized Josephson junctions fabrication process and demonstrate resistance variation of $9.8-4.4\%$ and $4.8-2.3\%$ across $22{\times}22$ $mm^2$ and $5{\times}10$ $mm^2$ chip areas, respectively. For a wide range of junction areas from $0.008$ ${\mu}m^2$ to $0.12$ ${\mu}m^2$ we ensure a small linewidth standard deviation of $4$ $nm$ measured over 4500 junctions with linear dimensions from $80$ to $680$ $nm$. The developed process was tested on superconducting highly coherent transmon qubits $(T_1 > 100\:{\mu}s)$ and a nonlinear asymmetric inductive element parametric amplifier

Deep multilevel wet etching of fused silica glass microstructures in BOE solution

Abstract Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its chemical resistance, optical, electrical, and mechanical performance. Wet etching is the key method for fabricating of such microdevices. Protective mask integrity is a big challenge due extremely aggressive properties of etching solution. Here, we propose multilevel microstructures fabrication route based on fused silica deep etching through a stepped mask. First, we provide an analysis of a fused silica dissolution mechanism in buffered oxide etching (BOE) solution and calculate the main fluoride fractions like $${HF}_{2}^{-}$$ HF 2 - , $${F}^{-}$$ F - , $${(HF)}_{2}$$ ( H F ) 2 as a function of pH and NH4F:HF ratio. Then, we experimentally investigate the influence of BOE composition (1:1–14:1) on the mask resistance, etch rate and profile isotropy during deep etching through a metal/photoresist mask. Finally, we demonstrate a high-quality multilevel over-200 μm etching process with the rate up to 3 μm/min, which could be of a great interest for advanced microdevices with flexure suspensions, inertial masses, microchannels, and through-wafer holes

Optical hydrogen sensing with high-Q guided-mode resonance of Al2O3/WO3/Pd nanostructure

Abstract Nanostructure based on a dielectric grating (Al2O3), gasochromic oxide (WO3) and catalyst (Pd) is proposed as a hydrogen sensor working at the room temperature. In the fabricated structure, the Pd catalyst film was as thin as 1 nm that allowed a significant decrease in the optical absorption. A high-Q guided-mode resonance was observed in a transmission spectrum at normal incidence and was utilized for hydrogen detection. The spectra were measured at 0–0.12% of hydrogen in a synthetic air (≈ 80% $${\text{N}}_{2}$$ N 2 and 20% $${\text{O}}_{2}$$ O 2 ). The detection limit below 100 ppm of hydrogen was demonstrated. Hydrogen was detected in the presence of oxygen, which provides the sensor recovery but suppresses the sensor response. Sensor response was treated by the principal component analysis (PCA), which effectively performs noise averaging. Influence of temperature and humidity was measured and processed by PCA, and elimination of the humidity and temperature effects was performed. Square root dependence of the sensor response on the hydrogen concentration (Sievert’s law) was observed. Sensor calibration curve was built, and the sensor resolution of 40 ppm was found. Long term stability of the sensor was investigated. Particularly, it was shown that the sensor retains its functionality after 6 months and dozens of acts of response to gas