68 research outputs found
Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells
Full text linkSpin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs
quantum wells are measured by means of Hanle effect. Three different spin
relaxation times for spins oriented along [110], [1-10] and [001]
crystallographic directions are extracted demonstrating anisotropy of
D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba
and Dresselhaus terms describing the spin-orbit coupling in semiconductor
quantum well structures. It is shown that the Rashba spin-orbit splitting is
about four times stronger than the Dresselhaus splitting in the studied
structure.Comment: 4 pages, 3 figure
The role of one-dimensional diffusion in a growth model of the surface of a Kossel’s crystal
No full textStructure of energy quantum levels in a quantum dot shaped as an oblate body of revolution
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Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system
No full textContinuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region
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