Influence of missmatch-induced stress and porosity of materials on technological process

In this paper we introduce an approach to increase density of field-effect transistors framework a C-multiplier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

An approach for prognosis of manufacturing of comparator with account missmatch-induced stress. On increasing of density of elements

In this paper we introduce an approach to increase density of field-effect transistors framework low-power dynamic comparator used in the far-end and near-end crosstalk adaptation loop. Based on this approach one shall manufacture a heterostructure with specific sections in epitaxial layer. These sections should be doped by diffusion or ion implantation. Doping procedure finishing by optimized annealing. During analysis of manufacturing of the considered comparator we find an approach for decreasing mismatch-induced stress. Also we consider an approach for analytical modeling of heat and mass transport during manufacturing of the considered comparator and other integrated circuits

An approach to model manufacturing of an enhanced swing differen-tial Colpitts oscillator based on heterostructures to increase density of their elements with account miss-match induced stress. On optimization of annealing

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar