Optical detection of CH_3 during diamond chemical vapor deposition

Measurements of CH_3 have been made using resonance-enhanced multiphoton ionization (REMPI) in two different diamond growth environments. Spatial profiles of methyl above the substrate have been measured in a filament- assisted reactor, which show that the CH_3 concentration is depleted near the substrate. The CH_3 concentration at the substrate shows an approximate Arrhenius dependence on substrate temperature below 1000 K, characterized by an activation energy of 4 kcal/mole. Methyl measurements were also made in 35 Torr hydrogen/oxygen flame into which methane is injected near the substrate. Radial profiles of methyl, acquired using REMPI, and of CH_4, acquired using sampling mass spectroscopy, are in good qualitative agreement with the results of numerical simulations

Comparison of diamond growth with different gas mixtures in microwave plasma asssited chemical vapor deposition (MWCVD)

In this work we study the influence of oxygen addition to several halocarbon-hydrogen gas systems. Diamond growth have been performed in a high power density MWCVD reactor built in our laboratory. The growth experiments are monitored by argon actinometry as a reference to plasma temperature and atomic hydrogen production, and by mass spectrometry to compare the exhaust gas composition. Atomic hydrogen actinometry revealed that the halogen presence in the gas phase is responsible for a considerable increase of atomic hydrogen concentration in the gas phase. Mass spectrometry shows similar results for all gas mixtures tested. Growth studies with oxygen addition to CF4/H2, CCl4/H2, CCl2F2/H2 and CH3Cl/H2 reveals that oxygen increases the carbon solubility in the gas phase but no better diamond growth conditions were found. Halogens are not, per se, eligible for diamond growth. All the possible advantages, as the higher production of atomic hydrogen, have been suppressed by the low carbon solubility in the gas phase, even when oxygen is added. The diamond growth with small amount of CF4 added to CH4/H2 mixture is not aggressive to the apparatus but brings several advantages to the process

Adherent Diamond-Like Carbon Coatings on Metals Via PECVD and IBAD

Adherent and low-stress a-C:H films were deposited on Ti6Al4V and stainless steel substrates using PECVD and IBAD techniques. An amorphous silicon interlayer was applied to improve the adhesion of the a-C:H films on the metal substrates. The XPS technique was employed to analyze the chemical bondings within the interfaces. The elemental composition and atomic density of the films were determined by ion beam analysis. The film microstructure was studied by means of Raman scattering spectroscopy. The mechanical properties were determined by means of stress and hardness measurements. The adherence was evaluated by means of scratch tests. The tests showed that the composition, the microstructure, and the mechanical properties of the films depend on the intensity of the ion bombardment and on the ion current