Silicon-on-insulator Technology for High-temperature Metal-oxide-semiconductor Devices and Circuits

The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 degrees C

Tungsten Metallization Technology for High-temperature Silicon-on-insulator Devices

Tungsten metallization technology has been developed for high temperature silicon-on-insulator devices and circuits. The experiments on tungsten evaporation, plasma etching, annealing and lift-off process for the contact pad will be described in detail. Contact resistances were measured and compared with that of an aluminum metallization system. No significant degradation was observed by static measurement from room temperature up to 320 degrees C