Review of the experimental results on impurity centers in elemental semiconductors obtained by. mu. SR and other techniques

Selected electron paramagnetic resonance studies of defect centers in group IV semiconductors are reviewed. Features of this research which are useful in analyzing the nature of normal and anomalous muonium (Mu and Mu*) in these crystals are pointed out, and a moderately specific model of Mu and Mu* is presented and compared to studies of hydrogen in silicon and germanium

DEMUR: double electron muon resonance

The details of a general theory of DEMUR are presented, with examples of current experimental interest: quartz, where the hyperfine interaction is nearly isotropic; and silicon, wherein an anisotropic species has been found. The theory will be compared with experimental data

Temperature dependence of anomalous muonium hyperfine interactions in silicon

The temperature dependence of the anomalous muonium hyperfine interaction has been measured in silicon. Between 5 and 150 K, an approximately 1% decrease is observed and attributed to interaction with the silicon host phonons

Zero and finite field. mu. SR in spin glass Ag:Mn

Muon spin rotation data taken in both zero and finite fields are presented for a Ag:Mn (1.6 at %) spin glass sample. The data enable determination of the fluctuation rate of the Mn ions as a function of temperature. (GHT