Path integral simulation of exchange interactions in CMOS spin qubits

The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interactions of three-dimensional electrically defined quantum dots. We apply this model to silicon metal-oxide-semiconductor (MOS) devices and we benchmark our method against well-tested full configuration interaction (FCI) simulations. As an application, we study the impact of a single charge trap on two exchanging dots, opening the possibility of using this code to test the tolerance to disorder of CMOS devices. This algorithm provides an accurate description of this system, setting up an initial step to integrate PIMC algorithms into development of semiconductor quantum computers.Comment: 10 pages , 5 figure

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology.Comment: 9 pages, 4 figure

Bounds to electron spin qubit variability for scalable CMOS architectures

Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and developing theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.Comment: 20 pages, 8 figure

Consistency of high-fidelity two-qubit operations in silicon

The consistency of entangling operations between qubits is essential for the performance of multi-qubit systems, and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to inconsistency due to the materials-induced variability of performance between qubits and the instability of gate fidelities over time. Here we quantify this consistency for spin qubits, tying it to its physical origins, while demonstrating sustained and repeatable operation of two-qubit gates with fidelities above 99% in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of the stability of these operations by analysing errors and fidelities in multiple devices through numerous trials and extended periods of operation. Adopting three different characterisation methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools also identify physical causes of qubit degradation and offer ways to maintain performance within tolerance. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results highlight both the capabilities and challenges for the scaling up of spin-based qubits into full-scale quantum processors

'To live and die [for] Dixie': Irish civilians and the Confederate States of America

Around 20,000 Irishmen served in the Confederate army in the Civil War. As a result, they left behind, in various Southern towns and cities, large numbers of friends, family, and community leaders. As with native-born Confederates, Irish civilian support was crucial to Irish participation in the Confederate military effort. Also, Irish civilians served in various supporting roles: in factories and hospitals, on railroads and diplomatic missions, and as boosters for the cause. They also, however, suffered in bombardments, sieges, and the blockade. Usually poorer than their native neighbours, they could not afford to become 'refugees' and move away from the centres of conflict. This essay, based on research from manuscript collections, contemporary newspapers, British Consular records, and Federal military records, will examine the role of Irish civilians in the Confederacy, and assess the role this activity had on their integration into Southern communities. It will also look at Irish civilians in the defeat of the Confederacy, particularly when they came under Union occupation. Initial research shows that Irish civilians were not as upset as other whites in the South about Union victory. They welcomed a return to normalcy, and often 'collaborated' with Union authorities. Also, Irish desertion rates in the Confederate army were particularly high, and I will attempt to gauge whether Irish civilians played a role in this. All of the research in this paper will thus be put in the context of the Drew Gilpin Faust/Gary Gallagher debate on the influence of the Confederate homefront on military performance. By studying the Irish civilian experience one can assess how strong the Confederate national experiment was. Was it a nation without a nationalism