Stacking-order dependent transport properties of trilayer graphene

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of \nu = 2, 4, 6... with a step of \Delta \nu = 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at \nu = 6 and 10 with 4-fold spin and valley degeneracy.Comment: 4 pages, 4 figure

Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices

We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo formula and an analysis of the Poincare surface of section at different magnetic field values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum.Comment: 4 pages, 4 Postscript figures, REVTeX, submitted to Phys Rev

Quantum Hall effect in a p-type heterojunction with a lateral surface quantum dot superlattice

The quantization of Hall conductance in a p-type heterojunction with lateral surface quantum dot superlattice is investigated. The topological properties of the four-component hole wavefunction are studied both in r- and k-spaces. New method of calculation of the Hall conductance in a 2D hole gas described by the Luttinger Hamiltonian and affected by lateral periodic potential is proposed, based on the investigation of four-component wavefunction singularities in k-space. The deviations from the quantization rules for Hofstadter "butterfly" for electrons are found, and the explanation of this effect is proposed. For the case of strong periodic potential the mixing of magnetic subbands is taken into account, and the exchange of the Chern numbers between magnetic subands is discussed.Comment: 12 pages, 5 figures; reported at the 15th Int. Conf. on High Magnetic Fields in Semicond. Phys. (Oxford, UK, 2002

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation of bilayer graphene based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low temperature measurements indicate, that the increased on/off ratio is caused by the opening of a mobility gap. Beside field effect transistors the presented approach can also be employed for other bilayer graphene based devices like photodetectors for THz to infrared radiation, chemical sensors and in more sophisticated structures such as antidot- or superlattices where an artificial potential landscape has to be created.Comment: 4 pages, 4 figure

Clar Sextet Analysis of Triangular, Rectangular and Honeycomb Graphene Antidot Lattices

Pristine graphene is a semimetal and thus does not have a band gap. By making a nanometer scale periodic array of holes in the graphene sheet a band gap may form; the size of the gap is controllable by adjusting the parameters of the lattice. The hole diameter, hole geometry, lattice geometry and the separation of the holes are parameters that all play an important role in determining the size of the band gap, which, for technological applications, should be at least of the order of tenths of an eV. We investigate four different hole configurations: the rectangular, the triangular, the rotated triangular and the honeycomb lattice. It is found that the lattice geometry plays a crucial role for size of the band gap: the triangular arrangement displays always a sizable gap, while for the other types only particular hole separations lead to a large gap. This observation is explained using Clar sextet theory, and we find that a sufficient condition for a large gap is that the number of sextets exceeds one third of the total number of hexagons in the unit cell. Furthermore, we investigate non-isosceles triangular structures to probe the sensitivity of the gap in triangular lattices to small changes in geometry