Manifestly gauge independent formulations of the Z2 invariants

We use a "monodromy" argument to derive new expressions for the ${\bm Z}_2$ invariants of topological insulators with time-reversal symmetry in 2 and 3 dimensions. The derivations and the final expressions do not require any gauge choice and the calculation of the invariants is based entirely on the projectors onto the occupied states. Explicit numerical tests for tight-binding models with strongly broken inversion symmetry are presented in 2 and 3-dimensions

Generalized Wannier Functions

We consider single particle Schrodinger operators with a gap in the en ergy spectrum. We construct a complete, orthonormal basis function set for the inv ariant space corresponding to the spectrum below the spectral gap, which are exponentially localized a round a set of closed surfaces of monotonically increasing sizes. Estimates on the exponential dec ay rate and a discussion of the geometry of these surfaces is included

Effect of Strong Disorder in a 3-Dimensional Topological Insulator: Phase Diagram and Maps of the Z2 Invariant

We study the effect of strong disorder in a 3-dimensional topological insulators with time-reversal symmetry and broken inversion symmetry. Firstly, using level statistics analysis, we demonstrate the persistence of delocalized bulk states even at large disorder. The delocalized spectrum is seen to display the levitation and pair annihilation effect, indicating that the delocalized states continue to carry the Z2 invariant after the onset of disorder. Secondly, the Z2 invariant is computed via twisted boundary conditions using an efficient numerical algorithm. We demonstrate that the Z2 invariant remains quantized and non-fluctuating even after the spectral gap becomes filled with dense localized states. In fact, our results indicate that the Z2 invariant remains quantized until the mobility gap closes or until the Fermi level touches the mobility edges. Based on such data, we compute the phase diagram of the Bi2Se3 topological material as function of disorder strength and position of the Fermi level.Comment: references added; final versio