Characterisation of anisotropic etching in KOH using network etch rate function model: influence of an applied potential in terms of microscopic properties

Using the network etch rate function model, the anisotropic etch rate of p-type single crystal silicon was characterised in terms of microscopic properties including step velocity, step and terrace roughening. The anisotropic etch rate data needed have been obtained using a combination of 2 wagon wheel patterns on different substrate and 1 offset trench pattern. Using this procedure the influence of an applied potential has been investigated in terms of microscopic properties. Model parameter trends show a good correlation with chemical/electrochemical reaction mechanism and mono- and dihydride terminated steps reactivity difference. Results also indicate a minimum in (111) terrace roughening which results in a peak in anisotropic ratio at the non-OCP applied potential of −1250 mV vs OCP

Planarization and fabrication of bridges across deep groves or holes in silicon using a dry film photoresist followed by an etch back

A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film lamination step to cover a wafer with a 38 mu m thick foil. Next the foil is etched back to the desired thickness of a few micrometres. This thin film facilitates resist spinning and high-resolution patterning. The planarization method is demonstrated by the fabrication of aluminium bridges across a deep groove in silicon

Materials analysis of fluorocarbon films for MEMS applications

In this paper the results of the materials analysis of fluorocarbon (FC) films are presented. The properties of the fluorocarbon films are comparable to those of polytetrafluoroethylene (PTFE), better known under the trademarks such as teflon and fluon. The properties of PTFE are desirable for MEMS applications and enable new designs, new applications and new technological processing routes for microsystems. Therefore, FC films have a tremendous potential for MEMS applications. Furthermore, FC films can easily be deposited via spin coating, e-beam evaporation, in conventional reactive ion etchers and in plasma-enhanced deposition chambers using a carbonhydrotrifluoride plasma facilitating the use of the films for micro electro-mechanical structures. The films deposited in a reactive ion etcher are extremely chemical resistant. The X-ray photoelectron spectroscopy (XPS) analyses results are presente

Comb-drive actuators for large displacements

The design, fabrication and experimental results of lateral-comb-drive actuators for large displacements at low driving voltages is presented. A comparison of several suspension designs is given, and the lateral large deflection behaviour of clamped - clamped beams and a folded flexure design is modelled. An expression for the axial spring constant of folded flexure designs including bending effects from lateral displacements, which reduce the axial stiffness, is also derived. The maximum deflection that can be obtained by comb-drive actuators is bounded by electromechanical side instability. Expressions for the side-instability voltage and the resulting displacement at side instability are given. The electromechanical behaviour around the resonance frequency is described by an equivalent electric circuit. Devices are fabricated by polysilicon surface micromachining techniques using a one-mask fabrication process. Static and dynamic properties are determined experimentally and are compared with theory. Static properties are determined by displacement-to-voltage, capacitance-to-voltage and pull-in voltage measurements. Using a one-port approach, dynamic properties are extracted from measured admittance plots. Typical actuator characteristics are deflections of about at driving voltages around 20 V, a resonance frequency around 1.6 kHz and a quality factor of approximately 3

Spontaneous direct bonding of thick silicon nitride

Wafers with LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical - mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si - Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding

Active joints for microrobot limbs

The authors propose an electrostatic actuator for active joints. The active joint consists of two plates, one of which is a bilayer and bent by the bimorph effect. The plates are clamped to each other at one edge. A voltage between the plates leads to a very large field at the clamp where the plates are in intimate contact, thereby producing a force large enough to pull the bent bimorph cantilever beam to the other plate. The design uses an actuator in which large electrical forces acting over a short distance are used to produce large deflections. An appealing application of this actuation principle is seen in active joints for robot arms, e.g. by attaching members to the actuator and by combining two or more active joints and members to form micro robot arms, legs and grippers

Nano-flow thermal sensor applying dymamic w-2w sensing method

This article presents microchannel thermal flow sensors fabricated using standard micromachining technology. The sensors comprise of a SiXNY microchannel created by etching of a poly-Si sacrificial layer. The channels are released by KOH etching through inlets and outlets etched from the backside of the substrate. Liquid flow is measured by platinum resistors deposited on top of the microchannel, while the channel is thermally isolated from the substrate by a SiXNY membrane. Flow rates of DI water in the order of nl⋅min-1 have been measured using a dynamic sensing method applying heat waves

Wet chemical etching mechanism of silicon

We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of crystal growth. Starting point is that there are smooth and rough crystal surfaces. The kinetics of smooth faces is controlled by a nucleation barrier that is absent on rough faces. The latter therefore etch faster by orders of magnitude. The analysis of the diamond crystal structure reveals that the {111} face is the only smooth face in this lattice-other faces might be smooth only because of surface reconstruction. In this way we explain the minimum of the etch rate in KOH:H2O in the <001> direction. Two critical predictions concerning the shape of the minimum of the etch rate close to <001> and the transition from isotropic to anisotropic etching in HF:HNO3 based solutions are tested experimentally. The results are in-agreement with the theor