Electrochromic properties of a poly(dithienylfuran) derivative featuring a redox-active dithiin unit

A teraryl monomer containing a 1,4-dithiin-furan central unit has been synthesised and characterised by single crystal X-ray crystallography. The di(thienyl)furan monomer 11 was successfully polymerised electrochemically and shown to possess a lower electrochemical band gap than its terthiophene analogue (1.97 eV cf. 2.11 eV). The electrochromic properties of this polymer proved to be superior to PEDOT, with fast switching and reversible colour transformation at high colour contrast (CE = 212 cm(2) C-1 cf. 183 cm(2) C-1 for PEDOT at 95% optical switch)

Synergistic electrodeposition of bilayer films and analysis by Raman spectroscopy

A novel methodology towards fabrication of multilayer organic devices, employing electrochemical polymer growth to form PEDOT and PEDTT layers, is successfully demonstrated. Moreover, careful control of the electrochemical conditions allows the degree of doping to be effectively altered for one of the polymer layers. Raman spectroscopy confirmed the formation and doped states of the PEDOT/PEDTT bilayer. The electrochemical deposition of a bilayer containing a de-doped PEDTT layer on top of doped PEDOT is analogous to a solution-processed organic semiconductor layer deposited on top of a PEDOT:PSS layer without the acidic PSS polymer. However, the poor solubility of electrochemically deposited PEDTT (or other electropolymerised potential candidates) raises the possibility of depositing a subsequent layer via solution-processing

Incorporation of fused tetrathiafulvalene units in a DPP-terthiophene copolymer for air stable solution processable organic field effect transistors

A new terthiophene-diketopyrrolopyrrole (DPP) copolymer has been synthesised in which the central thiophene ring within the terthiophene repeat unit is attached to a fused tetrathiafulvalene (TTF). The electrochemical and absorption data of the polymer, p(DPP-TTF), are presented, and the multi-redox states are investigated by UV-vis spectroelectrochemistry. Bottom gate/bottom contact field effect transistors were fabricated from films of p(DPP-TTF) annealed at 200 degrees C. The material, which under these conditions forms a fibrous structure, exhibited hole mobilities of 4 +/- 2 x 10(-2) cm(2) V-1 s(-1) with an on/off ratio of 1 x 10(4). The transistors showed little sign of degradation over 15 days of exposure under ambient conditions, demonstrating excellent air-stability. This characteristic is attributed to the incorporation of the TTF unit into the polymer